Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form
Abstract In this study, we fabricate air-stable p-type multi-layered MoTe2 phototransistor using Au as electrodes, which shows pronounced photovoltaic response in off-state with asymmetric contact form. By analyzing the spatially resolved photoresponse using scanning photocurrent microscopy, we foun...
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2017-11-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2373-5 |
| _version_ | 1797727986051448832 |
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| author | Junku Liu Nan Guo Xiaoyang Xiao Kenan Zhang Yi Jia Shuyun Zhou Yang Wu Qunqing Li Lin Xiao |
| author_facet | Junku Liu Nan Guo Xiaoyang Xiao Kenan Zhang Yi Jia Shuyun Zhou Yang Wu Qunqing Li Lin Xiao |
| author_sort | Junku Liu |
| collection | DOAJ |
| description | Abstract In this study, we fabricate air-stable p-type multi-layered MoTe2 phototransistor using Au as electrodes, which shows pronounced photovoltaic response in off-state with asymmetric contact form. By analyzing the spatially resolved photoresponse using scanning photocurrent microscopy, we found that the potential steps are formed in the vicinity of the electrodes/MoTe2 interface due to the doping of the MoTe2 by the metal contacts. The potential step dominates the separation of photoexcited electron-hole pairs in short-circuit condition or with small V sd biased. Based on these findings, we infer that the asymmetric contact cross-section between MoTe2-source and MoTe2-drain electrodes is the reason to form non-zero net current and photovoltaic response. Furthermore, MoTe2 phototransistor shows a faster response in short-circuit condition than that with higher biased V sd within sub-millisecond, and its spectral range can be extended to the infrared end of 1550 nm. |
| first_indexed | 2024-03-12T11:07:20Z |
| format | Article |
| id | doaj.art-331a924d51904542996ad9a9420794a6 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T11:07:20Z |
| publishDate | 2017-11-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-331a924d51904542996ad9a9420794a62023-09-02T03:28:01ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-11-011211810.1186/s11671-017-2373-5Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact FormJunku Liu0Nan Guo1Xiaoyang Xiao2Kenan Zhang3Yi Jia4Shuyun Zhou5Yang Wu6Qunqing Li7Lin Xiao8Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space TechnologyNanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space TechnologyState Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua UniversityDepartment of Physics, Tsinghua UniversityNanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space TechnologyDepartment of Physics, Tsinghua UniversityState Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua UniversityState Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua UniversityNanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space TechnologyAbstract In this study, we fabricate air-stable p-type multi-layered MoTe2 phototransistor using Au as electrodes, which shows pronounced photovoltaic response in off-state with asymmetric contact form. By analyzing the spatially resolved photoresponse using scanning photocurrent microscopy, we found that the potential steps are formed in the vicinity of the electrodes/MoTe2 interface due to the doping of the MoTe2 by the metal contacts. The potential step dominates the separation of photoexcited electron-hole pairs in short-circuit condition or with small V sd biased. Based on these findings, we infer that the asymmetric contact cross-section between MoTe2-source and MoTe2-drain electrodes is the reason to form non-zero net current and photovoltaic response. Furthermore, MoTe2 phototransistor shows a faster response in short-circuit condition than that with higher biased V sd within sub-millisecond, and its spectral range can be extended to the infrared end of 1550 nm.http://link.springer.com/article/10.1186/s11671-017-2373-5MoTe2PhotovoltaicInterfaceAsymmetric |
| spellingShingle | Junku Liu Nan Guo Xiaoyang Xiao Kenan Zhang Yi Jia Shuyun Zhou Yang Wu Qunqing Li Lin Xiao Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form Nanoscale Research Letters MoTe2 Photovoltaic Interface Asymmetric |
| title | Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form |
| title_full | Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form |
| title_fullStr | Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form |
| title_full_unstemmed | Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form |
| title_short | Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form |
| title_sort | pronounced photovoltaic response from multi layered mote2 phototransistor with asymmetric contact form |
| topic | MoTe2 Photovoltaic Interface Asymmetric |
| url | http://link.springer.com/article/10.1186/s11671-017-2373-5 |
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