Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications
Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further ad...
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| Format: | Article |
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MDPI AG
2022-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/7/1125 |
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| author | Wangying Xu Tao Peng Yujia Li Fang Xu Yu Zhang Chun Zhao Ming Fang Shun Han Deliang Zhu Peijiang Cao Wenjun Liu Youming Lu |
| author_facet | Wangying Xu Tao Peng Yujia Li Fang Xu Yu Zhang Chun Zhao Ming Fang Shun Han Deliang Zhu Peijiang Cao Wenjun Liu Youming Lu |
| author_sort | Wangying Xu |
| collection | DOAJ |
| description | Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In<sub>2</sub>O<sub>3</sub> film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO<sub>2</sub>/Si substrate demonstrate a mobility of ~8 cm<sup>2</sup>/(V s), an on/off current ratio of ~10<sup>6</sup> and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO<sub>2</sub> dielectric, the fully aqueous solution-grown In-B-O/ZrO<sub>2</sub> TFTs exhibit excellent device performance, with a mobility of ~11 cm<sup>2</sup>/(V s), an on/off current of ~10<sup>5</sup>, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance. |
| first_indexed | 2024-03-09T11:34:20Z |
| format | Article |
| id | doaj.art-3320365d19b44c038d84b4c9e149a575 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T11:34:20Z |
| publishDate | 2022-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-3320365d19b44c038d84b4c9e149a5752023-11-30T23:44:49ZengMDPI AGNanomaterials2079-49912022-03-01127112510.3390/nano12071125Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor ApplicationsWangying Xu0Tao Peng1Yujia Li2Fang Xu3Yu Zhang4Chun Zhao5Ming Fang6Shun Han7Deliang Zhu8Peijiang Cao9Wenjun Liu10Youming Lu11Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaGuangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaGuangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaCenter for Advanced Material Diagnostic Technology, Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, ChinaDepartment of electronic and Communication Engineering, Shenzhen Polytechnic, Shenzhen 518055, ChinaDepartment of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaGuangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaGuangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaGuangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaGuangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaGuangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaGuangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, ChinaThin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In<sub>2</sub>O<sub>3</sub> film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO<sub>2</sub>/Si substrate demonstrate a mobility of ~8 cm<sup>2</sup>/(V s), an on/off current ratio of ~10<sup>6</sup> and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO<sub>2</sub> dielectric, the fully aqueous solution-grown In-B-O/ZrO<sub>2</sub> TFTs exhibit excellent device performance, with a mobility of ~11 cm<sup>2</sup>/(V s), an on/off current of ~10<sup>5</sup>, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance.https://www.mdpi.com/2079-4991/12/7/1125In-B-Othin-film transistorscrystallinewater processedultrathinatomically smooth |
| spellingShingle | Wangying Xu Tao Peng Yujia Li Fang Xu Yu Zhang Chun Zhao Ming Fang Shun Han Deliang Zhu Peijiang Cao Wenjun Liu Youming Lu Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications Nanomaterials In-B-O thin-film transistors crystalline water processed ultrathin atomically smooth |
| title | Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications |
| title_full | Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications |
| title_fullStr | Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications |
| title_full_unstemmed | Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications |
| title_short | Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications |
| title_sort | water processed ultrathin crystalline indium boron oxide channel for high performance thin film transistor applications |
| topic | In-B-O thin-film transistors crystalline water processed ultrathin atomically smooth |
| url | https://www.mdpi.com/2079-4991/12/7/1125 |
| work_keys_str_mv | AT wangyingxu waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT taopeng waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT yujiali waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT fangxu waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT yuzhang waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT chunzhao waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT mingfang waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT shunhan waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT deliangzhu waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT peijiangcao waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT wenjunliu waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications AT youminglu waterprocessedultrathincrystallineindiumboronoxidechannelforhighperformancethinfilmtransistorapplications |