Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride
Abstract Spatially encoded measurements of transient optical transmissivity became a standard tool for temporal diagnostics of free-electron-laser (FEL) pulses, as well as for the arrival time measurements in X-ray pump and optical probe experiments. The modern experimental techniques can measure ch...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2021-03-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-021-84677-w |
| _version_ | 1818858154044162048 |
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| author | Victor Tkachenko Vladimir Lipp Martin Büscher Flavio Capotondi Hauke Höppner Nikita Medvedev Emanuele Pedersoli Mark J. Prandolini Giulio M. Rossi Franz Tavella Sven Toleikis Matthew Windeler Beata Ziaja Ulrich Teubner |
| author_facet | Victor Tkachenko Vladimir Lipp Martin Büscher Flavio Capotondi Hauke Höppner Nikita Medvedev Emanuele Pedersoli Mark J. Prandolini Giulio M. Rossi Franz Tavella Sven Toleikis Matthew Windeler Beata Ziaja Ulrich Teubner |
| author_sort | Victor Tkachenko |
| collection | DOAJ |
| description | Abstract Spatially encoded measurements of transient optical transmissivity became a standard tool for temporal diagnostics of free-electron-laser (FEL) pulses, as well as for the arrival time measurements in X-ray pump and optical probe experiments. The modern experimental techniques can measure changes in optical coefficients with a temporal resolution better than 10 fs. This, in an ideal case, would imply a similar resolution for the temporal pulse properties and the arrival time jitter between the FEL and optical laser pulses. However, carrier transport within the material and out of its surface, as well as carrier recombination may, in addition, significantly decrease the number of carriers. This would strongly affect the transient optical properties, making the diagnostic measurement inaccurate. Below we analyze in detail the effects of those processes on the optical properties of XUV and soft X-ray irradiated Si $${_3}$$ 3 N $$_4$$ 4 , on sub-picosecond timescales. Si $${_3}$$ 3 N $$_4$$ 4 is a wide-gap insulating material widely used for FEL pulse diagnostics. Theoretical predictions are compared with the published results of two experiments at FERMI and LCLS facilities, and with our own recent measurement. The comparison indicates that three body Auger recombination strongly affects the optical response of Si $${_3}$$ 3 N $$_4$$ 4 after its collisional ionization stops. By deconvolving the contribution of Auger recombination, in future applications one could regain a high temporal resolution for the reconstruction of the FEL pulse properties measured with a Si $${_3}$$ 3 N $$_4$$ 4 -based diagnostics tool. |
| first_indexed | 2024-12-19T08:51:46Z |
| format | Article |
| id | doaj.art-3348530a70714b629b6e5fb2d35b9d06 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-19T08:51:46Z |
| publishDate | 2021-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-3348530a70714b629b6e5fb2d35b9d062022-12-21T20:28:42ZengNature PortfolioScientific Reports2045-23222021-03-0111111010.1038/s41598-021-84677-wEffect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitrideVictor Tkachenko0Vladimir Lipp1Martin Büscher2Flavio Capotondi3Hauke Höppner4Nikita Medvedev5Emanuele Pedersoli6Mark J. Prandolini7Giulio M. Rossi8Franz Tavella9Sven Toleikis10Matthew Windeler11Beata Ziaja12Ulrich Teubner13Institute for Laser and Optics, Hochschule Emden/Leer-University of Applied SciencesCenter for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESYInstitute for Laser and Optics, Hochschule Emden/Leer-University of Applied SciencesElettra-Sincrotrone Trieste S.C.p.AInstitute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf e.V.Institute of Physics CAS, v.v.i.Elettra-Sincrotrone Trieste S.C.p.AInstitut für Experimentalphysik, Universität HamburgCenter for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESYSLAC National Accelerator LaboratoryDeutsches Elektronen-Synchrotron DESYSLAC National Accelerator LaboratoryInstitute of Nuclear Physics, Polish Academy of SciencesInstitute for Laser and Optics, Hochschule Emden/Leer-University of Applied SciencesAbstract Spatially encoded measurements of transient optical transmissivity became a standard tool for temporal diagnostics of free-electron-laser (FEL) pulses, as well as for the arrival time measurements in X-ray pump and optical probe experiments. The modern experimental techniques can measure changes in optical coefficients with a temporal resolution better than 10 fs. This, in an ideal case, would imply a similar resolution for the temporal pulse properties and the arrival time jitter between the FEL and optical laser pulses. However, carrier transport within the material and out of its surface, as well as carrier recombination may, in addition, significantly decrease the number of carriers. This would strongly affect the transient optical properties, making the diagnostic measurement inaccurate. Below we analyze in detail the effects of those processes on the optical properties of XUV and soft X-ray irradiated Si $${_3}$$ 3 N $$_4$$ 4 , on sub-picosecond timescales. Si $${_3}$$ 3 N $$_4$$ 4 is a wide-gap insulating material widely used for FEL pulse diagnostics. Theoretical predictions are compared with the published results of two experiments at FERMI and LCLS facilities, and with our own recent measurement. The comparison indicates that three body Auger recombination strongly affects the optical response of Si $${_3}$$ 3 N $$_4$$ 4 after its collisional ionization stops. By deconvolving the contribution of Auger recombination, in future applications one could regain a high temporal resolution for the reconstruction of the FEL pulse properties measured with a Si $${_3}$$ 3 N $$_4$$ 4 -based diagnostics tool.https://doi.org/10.1038/s41598-021-84677-w |
| spellingShingle | Victor Tkachenko Vladimir Lipp Martin Büscher Flavio Capotondi Hauke Höppner Nikita Medvedev Emanuele Pedersoli Mark J. Prandolini Giulio M. Rossi Franz Tavella Sven Toleikis Matthew Windeler Beata Ziaja Ulrich Teubner Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride Scientific Reports |
| title | Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride |
| title_full | Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride |
| title_fullStr | Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride |
| title_full_unstemmed | Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride |
| title_short | Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride |
| title_sort | effect of auger recombination on transient optical properties in xuv and soft x ray irradiated silicon nitride |
| url | https://doi.org/10.1038/s41598-021-84677-w |
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