AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers
This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO<sub>2</sub> is used to form the dielectric and passivation layers. The TiO<sub>2</sub> film is characterized using X-ray photoemission spectroscopy (XPS), Ra...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-05-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/6/1183 |
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| author | Yu-Shyan Lin Chi-Che Lu |
| author_facet | Yu-Shyan Lin Chi-Che Lu |
| author_sort | Yu-Shyan Lin |
| collection | DOAJ |
| description | This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO<sub>2</sub> is used to form the dielectric and passivation layers. The TiO<sub>2</sub> film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The quality of the gate oxide is improved by annealing at 300 °C in N<sub>2</sub>. Experimental results indicate that the annealed MOS structure effectively reduces the gate leakage current. The high performance of the annealed MOS-HEMTs and their stable operation at elevated temperatures up to 450 K is demonstrated. Furthermore, annealing improves their output power characteristics. |
| first_indexed | 2024-03-11T02:09:02Z |
| format | Article |
| id | doaj.art-338b59f5ed5a4cdea8aef52fe8116680 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T02:09:02Z |
| publishDate | 2023-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-338b59f5ed5a4cdea8aef52fe81166802023-11-18T11:39:33ZengMDPI AGMicromachines2072-666X2023-05-01146118310.3390/mi14061183AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric LayersYu-Shyan Lin0Chi-Che Lu1Department of Materials Science and Engineering, National Dong Hwa University, Hualien 974301, TaiwanDepartment of Materials Science and Engineering, National Dong Hwa University, Hualien 974301, TaiwanThis paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO<sub>2</sub> is used to form the dielectric and passivation layers. The TiO<sub>2</sub> film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The quality of the gate oxide is improved by annealing at 300 °C in N<sub>2</sub>. Experimental results indicate that the annealed MOS structure effectively reduces the gate leakage current. The high performance of the annealed MOS-HEMTs and their stable operation at elevated temperatures up to 450 K is demonstrated. Furthermore, annealing improves their output power characteristics.https://www.mdpi.com/2072-666X/14/6/1183MOS-HEMTAlGaNGaNsilicon substrateTiO<sub>2</sub>passivation |
| spellingShingle | Yu-Shyan Lin Chi-Che Lu AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers Micromachines MOS-HEMT AlGaN GaN silicon substrate TiO<sub>2</sub> passivation |
| title | AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers |
| title_full | AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers |
| title_fullStr | AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers |
| title_full_unstemmed | AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers |
| title_short | AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers |
| title_sort | algan gan metal oxide semiconductor high electron mobility transistors with annealed tio sub 2 sub as passivation and dielectric layers |
| topic | MOS-HEMT AlGaN GaN silicon substrate TiO<sub>2</sub> passivation |
| url | https://www.mdpi.com/2072-666X/14/6/1183 |
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