Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature
Abstract The low thermal conductivity of a material is a key essential parameter for its potential application in high‐performance thermoelectric devices. Unprecedently low thermal conductivity of germanium tin (Ge1−xSnx) semiconductor thin film is experimentally obtained at room temperature. The th...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-01-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300711 |
| _version_ | 1797353519927263232 |
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| author | Sabur Ayinde Maksym Myronov |
| author_facet | Sabur Ayinde Maksym Myronov |
| author_sort | Sabur Ayinde |
| collection | DOAJ |
| description | Abstract The low thermal conductivity of a material is a key essential parameter for its potential application in high‐performance thermoelectric devices. Unprecedently low thermal conductivity of germanium tin (Ge1−xSnx) semiconductor thin film is experimentally obtained at room temperature. The thermal conductivity decreases with increasing Sn concentration in the relaxed Ge1−xSnx binary alloy, which is explained mainly by increasing the interatomic distance between atoms via alloying. A pronounced decrease of thermal conductivity, by over 20 times, from 58 W m−1K−1 in Ge to ≈2.5 W m−1K−1 in relaxed Ge1−xSnx, with Sn content up to 9% is observed. This thermal conductivity is just ≈2 times higher than that of the state‐of‐the‐art thermoelectric material, Bismuth Selenium Telluride. Ge1−xSnx, in contrast, is a non‐toxic Group‐IV semiconductor material, that is epitaxially grown on a standard silicon wafer up to 300 mm diameter using the semiconductor industry standard epitaxial growth technique. As a result, it can lead to the creation of a long‐awaited high‐performance low‐cost thermoelectric energy generator for room‐temperature applications in human's daily life and would make a substantial contribution toward global efforts in CO2 emission‐free and green electricity generation. |
| first_indexed | 2024-03-08T13:32:15Z |
| format | Article |
| id | doaj.art-33b577c5dbf1472199e05e0d483f325d |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-08T13:32:15Z |
| publishDate | 2024-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-33b577c5dbf1472199e05e0d483f325d2024-01-17T05:39:56ZengWiley-VCHAdvanced Materials Interfaces2196-73502024-01-01112n/an/a10.1002/admi.202300711Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room TemperatureSabur Ayinde0Maksym Myronov1Department of Physics University of Warwick Coventry CV4 7AL UKDepartment of Physics University of Warwick Coventry CV4 7AL UKAbstract The low thermal conductivity of a material is a key essential parameter for its potential application in high‐performance thermoelectric devices. Unprecedently low thermal conductivity of germanium tin (Ge1−xSnx) semiconductor thin film is experimentally obtained at room temperature. The thermal conductivity decreases with increasing Sn concentration in the relaxed Ge1−xSnx binary alloy, which is explained mainly by increasing the interatomic distance between atoms via alloying. A pronounced decrease of thermal conductivity, by over 20 times, from 58 W m−1K−1 in Ge to ≈2.5 W m−1K−1 in relaxed Ge1−xSnx, with Sn content up to 9% is observed. This thermal conductivity is just ≈2 times higher than that of the state‐of‐the‐art thermoelectric material, Bismuth Selenium Telluride. Ge1−xSnx, in contrast, is a non‐toxic Group‐IV semiconductor material, that is epitaxially grown on a standard silicon wafer up to 300 mm diameter using the semiconductor industry standard epitaxial growth technique. As a result, it can lead to the creation of a long‐awaited high‐performance low‐cost thermoelectric energy generator for room‐temperature applications in human's daily life and would make a substantial contribution toward global efforts in CO2 emission‐free and green electricity generation.https://doi.org/10.1002/admi.202300711CVDepitaxy, germanium tin, microfabrication, thermal conductivity |
| spellingShingle | Sabur Ayinde Maksym Myronov Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature Advanced Materials Interfaces CVD epitaxy, germanium tin, microfabrication, thermal conductivity |
| title | Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature |
| title_full | Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature |
| title_fullStr | Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature |
| title_full_unstemmed | Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature |
| title_short | Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature |
| title_sort | revealing low thermal conductivity of germanium tin semiconductor at room temperature |
| topic | CVD epitaxy, germanium tin, microfabrication, thermal conductivity |
| url | https://doi.org/10.1002/admi.202300711 |
| work_keys_str_mv | AT saburayinde revealinglowthermalconductivityofgermaniumtinsemiconductoratroomtemperature AT maksymmyronov revealinglowthermalconductivityofgermaniumtinsemiconductoratroomtemperature |