Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature
Abstract The low thermal conductivity of a material is a key essential parameter for its potential application in high‐performance thermoelectric devices. Unprecedently low thermal conductivity of germanium tin (Ge1−xSnx) semiconductor thin film is experimentally obtained at room temperature. The th...
Main Authors: | Sabur Ayinde, Maksym Myronov |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley-VCH
2024-01-01
|
Series: | Advanced Materials Interfaces |
Subjects: | |
Online Access: | https://doi.org/10.1002/admi.202300711 |
Similar Items
-
Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature
by: Maksym Myronov, et al.
Published: (2024-09-01) -
The chemistry of germanium, tin and lead /
by: Rochow, Eugene George, 1909-, et al.
Published: (1973) -
GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting
by: Zhou, Jie, et al.
Published: (2024) -
Strain relaxation of germanium-tin (GeSn) fins
by: Kang, Yuye, et al.
Published: (2018) -
Bis(pentamethylcyclopentadienyl)germanium und -zinn sowie (Pentamethylcyclopentadienyl)germanium- und -zinn-kationen : synthese, struktur und bindungsverhaltnisse /
by: Jutzi, Peter