High reactivity of H2O vapor on GaN surfaces

High reactivity of H2O vapor on GaN surfaces

Understanding the process of oxidation on the surface of GaN is important for improving metal-oxide-semiconductor (MOS) devices. Real-time X-ray photoelectron spectroscopy was used to observe the dynamic adsorption behavior of GaN surfaces upon irradiation of H2O, O2, N2O, and NO gases. It was found...

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Bibliographic Details
Main Authors: Masatomo Sumiya, Masato Sumita, Yasutaka Tsuda, Tetsuya Sakamoto, Liwen Sang, Yoshitomo Harada, Akitaka Yoshigoe
Format: Article
Language:English
Published: Taylor & Francis Group 2022-12-01
Series:Science and Technology of Advanced Materials
Subjects:
Surface oxidation
GaN
density functional molecular dynamic calculation
MOS structure
Online Access:https://www.tandfonline.com/doi/10.1080/14686996.2022.2052180

Internet

https://www.tandfonline.com/doi/10.1080/14686996.2022.2052180

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