Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT) of vanadium dioxide (VO2) thin films synthesized on aluminum nitride (AlN)/Si (111) substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer a...

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Bibliographic Details
Main Authors:	Tetiana Slusar, Jin-Cheol Cho, Bong-Jun Kim, Sun Jin Yun, Hyun-Tak Kim
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-02-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.4940901

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