Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications
Abstract Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This switching between high and low resistance states is at the base of cutting edge technological implementations such as neural/synaptic devices or random number g...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-11-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-23629-4 |
| _version_ | 1798018381514801152 |
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| author | Stefania Carapezzi Corentin Delacour Andrew Plews Ahmed Nejim Siegfried Karg Aida Todri-Sanial |
| author_facet | Stefania Carapezzi Corentin Delacour Andrew Plews Ahmed Nejim Siegfried Karg Aida Todri-Sanial |
| author_sort | Stefania Carapezzi |
| collection | DOAJ |
| description | Abstract Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This switching between high and low resistance states is at the base of cutting edge technological implementations such as neural/synaptic devices or random number generators. A detailed understanding of this operating mechanisms is essential prerequisite to exploit the full potentiality of volatile memristors. In this respect, multi-physics device simulations provide a powerful tool to single out material properties and device features that are the keys to achieve desired behaviors. In this paper, we perform 3D electrothermal simulations of volatile memristors based on vanadium dioxide (VO $$_{2}$$ 2 ) to accurately investigate the interplay among Joule effect, heat dissipation and the external temperature $$T_{0}$$ T 0 over their resistive switching mechanism. In particular, we extract from our simulations a simplified model for the effect of $$T_{0}$$ T 0 over the negative differential resistance (NDR) region of such devices. The NDR of VO $$_{2}$$ 2 devices is pivotal for building VO $$_{2}$$ 2 oscillators, which have been recently shown to be essential elements of oscillatory neural networks (ONNs). ONNs are innovative neuromorphic circuits that harness oscillators’ phases to compute. Our simulations quantify the impact of $$T_{0}$$ T 0 over figures of merit of VO $$_{2}$$ 2 oscillator, such as frequency, voltage amplitude and average power per cycle. Our findings shed light over the interlinked thermal and electrical behavior of VO $$_{2}$$ 2 volatile memristors and oscillators, and provide a roadmap for the development of ONN technology. |
| first_indexed | 2024-04-11T16:21:59Z |
| format | Article |
| id | doaj.art-33c9c9b565374aada6968741766d3145 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-11T16:21:59Z |
| publishDate | 2022-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-33c9c9b565374aada6968741766d31452022-12-22T04:14:17ZengNature PortfolioScientific Reports2045-23222022-11-011211910.1038/s41598-022-23629-4Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applicationsStefania Carapezzi0Corentin Delacour1Andrew Plews2Ahmed Nejim3Siegfried Karg4Aida Todri-Sanial5Microelectronics Department, LIRMM, University of Montpellier, CNRSMicroelectronics Department, LIRMM, University of Montpellier, CNRSSilvaco Europe Ltd.Silvaco Europe Ltd.Department of Science and Technology, IBM Research Europe - ZurichMicroelectronics Department, LIRMM, University of Montpellier, CNRSAbstract Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This switching between high and low resistance states is at the base of cutting edge technological implementations such as neural/synaptic devices or random number generators. A detailed understanding of this operating mechanisms is essential prerequisite to exploit the full potentiality of volatile memristors. In this respect, multi-physics device simulations provide a powerful tool to single out material properties and device features that are the keys to achieve desired behaviors. In this paper, we perform 3D electrothermal simulations of volatile memristors based on vanadium dioxide (VO $$_{2}$$ 2 ) to accurately investigate the interplay among Joule effect, heat dissipation and the external temperature $$T_{0}$$ T 0 over their resistive switching mechanism. In particular, we extract from our simulations a simplified model for the effect of $$T_{0}$$ T 0 over the negative differential resistance (NDR) region of such devices. The NDR of VO $$_{2}$$ 2 devices is pivotal for building VO $$_{2}$$ 2 oscillators, which have been recently shown to be essential elements of oscillatory neural networks (ONNs). ONNs are innovative neuromorphic circuits that harness oscillators’ phases to compute. Our simulations quantify the impact of $$T_{0}$$ T 0 over figures of merit of VO $$_{2}$$ 2 oscillator, such as frequency, voltage amplitude and average power per cycle. Our findings shed light over the interlinked thermal and electrical behavior of VO $$_{2}$$ 2 volatile memristors and oscillators, and provide a roadmap for the development of ONN technology.https://doi.org/10.1038/s41598-022-23629-4 |
| spellingShingle | Stefania Carapezzi Corentin Delacour Andrew Plews Ahmed Nejim Siegfried Karg Aida Todri-Sanial Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications Scientific Reports |
| title | Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
| title_full | Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
| title_fullStr | Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
| title_full_unstemmed | Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
| title_short | Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
| title_sort | role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
| url | https://doi.org/10.1038/s41598-022-23629-4 |
| work_keys_str_mv | AT stefaniacarapezzi roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications AT corentindelacour roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications AT andrewplews roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications AT ahmednejim roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications AT siegfriedkarg roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications AT aidatodrisanial roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications |