Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells
The junction properties at the solution-processed titanium dioxide (TiO2)/n-type crystalline Si(n-Si) interface were studied for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/n-Si heterojunction solar cells by the steady-state photovoltaic performance and transient reverse rec...
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| Format: | Article |
| Language: | English |
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EDP Sciences
2020-01-01
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| Series: | EPJ Photovoltaics |
| Subjects: | |
| Online Access: | https://www.epj-pv.org/articles/epjpv/full_html/2020/01/pv190020/pv190020.html |
| _version_ | 1819050332713385984 |
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| author | Karim Md. Enamul Saiful Islam A.T.M. Nasuno Yuki Kuddus Abdul Ishikawa Ryo Shirai Hajime |
| author_facet | Karim Md. Enamul Saiful Islam A.T.M. Nasuno Yuki Kuddus Abdul Ishikawa Ryo Shirai Hajime |
| author_sort | Karim Md. Enamul |
| collection | DOAJ |
| description | The junction properties at the solution-processed titanium dioxide (TiO2)/n-type crystalline Si(n-Si) interface were studied for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/n-Si heterojunction solar cells by the steady-state photovoltaic performance and transient reverse recovery characterizations. The power conversion efficiency could be increased from 11.23% to 13.08% by adjusting the layer thickness of TiO2 together with increasing open-circuit voltage and suppressed dark saturation current density. These findings originate from the enhancement of the carrier collection efficiency at the n-Si/cathode interface. The transient reverse recovery characterization revealed that the surface recombination velocity S was ∼375 cm/s for double TiO2 interlayer of ∼2 nm thickness. This value was almost the same as that determined by microwave photoconductance decay measurement. These findings suggest that solution-processed TiO2 has potential as a hole blocking layer for the crystalline Si photovoltaics. |
| first_indexed | 2024-12-21T11:46:22Z |
| format | Article |
| id | doaj.art-33f624ec90fb4364aec3e7b7132aac17 |
| institution | Directory Open Access Journal |
| issn | 2105-0716 |
| language | English |
| last_indexed | 2024-12-21T11:46:22Z |
| publishDate | 2020-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | EPJ Photovoltaics |
| spelling | doaj.art-33f624ec90fb4364aec3e7b7132aac172022-12-21T19:05:09ZengEDP SciencesEPJ Photovoltaics2105-07162020-01-0111710.1051/epjpv/2020004pv190020Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cellsKarim Md. Enamul0Saiful Islam A.T.M.1Nasuno Yuki2Kuddus Abdul3Ishikawa Ryo4Shirai Hajime5Graduate School of Science and Engineering, Saitama UniversityGraduate School of Science and Engineering, Saitama UniversityGraduate School of Science and Engineering, Saitama UniversityGraduate School of Science and Engineering, Saitama UniversityGraduate School of Science and Engineering, Saitama UniversityGraduate School of Science and Engineering, Saitama UniversityThe junction properties at the solution-processed titanium dioxide (TiO2)/n-type crystalline Si(n-Si) interface were studied for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/n-Si heterojunction solar cells by the steady-state photovoltaic performance and transient reverse recovery characterizations. The power conversion efficiency could be increased from 11.23% to 13.08% by adjusting the layer thickness of TiO2 together with increasing open-circuit voltage and suppressed dark saturation current density. These findings originate from the enhancement of the carrier collection efficiency at the n-Si/cathode interface. The transient reverse recovery characterization revealed that the surface recombination velocity S was ∼375 cm/s for double TiO2 interlayer of ∼2 nm thickness. This value was almost the same as that determined by microwave photoconductance decay measurement. These findings suggest that solution-processed TiO2 has potential as a hole blocking layer for the crystalline Si photovoltaics.https://www.epj-pv.org/articles/epjpv/full_html/2020/01/pv190020/pv190020.htmlhole blocking layertio2surface recombination velocitytransient reverse recovery |
| spellingShingle | Karim Md. Enamul Saiful Islam A.T.M. Nasuno Yuki Kuddus Abdul Ishikawa Ryo Shirai Hajime Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells EPJ Photovoltaics hole blocking layer tio2 surface recombination velocity transient reverse recovery |
| title | Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells |
| title_full | Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells |
| title_fullStr | Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells |
| title_full_unstemmed | Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells |
| title_short | Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells |
| title_sort | solution processed tio2 as a hole blocking layer in pedot pss n si heterojunction solar cells |
| topic | hole blocking layer tio2 surface recombination velocity transient reverse recovery |
| url | https://www.epj-pv.org/articles/epjpv/full_html/2020/01/pv190020/pv190020.html |
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