Transport phenomena and conductivity mechanism in Sm doped Bi4V2−xSmxO11 ceramics

The polycrystalline samples of Sm doped Bi4V2−xSmxO11 with x = 0.05, 0.10, 0.15 and 0.20 ceramics were prepared by using solid-state reaction technique. The structural characterization of the prepared samples were confirmed by X-ray powder diffraction (XRD) and showed an orthorhombic and monoclinic...

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Main Authors: Sasmitarani Bag, Banarji Behera
Format: Article
Language:English
Published: Elsevier 2016-12-01
Series:Journal of Science: Advanced Materials and Devices
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2468217916301447
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author Sasmitarani Bag
Banarji Behera
author_facet Sasmitarani Bag
Banarji Behera
author_sort Sasmitarani Bag
collection DOAJ
description The polycrystalline samples of Sm doped Bi4V2−xSmxO11 with x = 0.05, 0.10, 0.15 and 0.20 ceramics were prepared by using solid-state reaction technique. The structural characterization of the prepared samples were confirmed by X-ray powder diffraction (XRD) and showed an orthorhombic and monoclinic phase. The nature of Nyquist plot confirms the presence of both grain and grain boundary effects for all Sm doped compounds. The grain resistance decreases with rise in temperature for all the samples and exhibits a typical negative temperature co-efficient of resistance (NTCR) behavior. The ac conductivity spectrum obeys Jonscher's universal power law. The modulus analysis suggests a possible hopping mechanism for electrical transport processes of the materials. The nature of variation of dc conductivity suggests the Arrhenius type of electrical conductivity for all the samples.
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spelling doaj.art-340e60c800354fd9ab523565b1d15f8f2022-12-22T01:41:23ZengElsevierJournal of Science: Advanced Materials and Devices2468-21792016-12-011451252010.1016/j.jsamd.2016.10.004Transport phenomena and conductivity mechanism in Sm doped Bi4V2−xSmxO11 ceramicsSasmitarani BagBanarji BeheraThe polycrystalline samples of Sm doped Bi4V2−xSmxO11 with x = 0.05, 0.10, 0.15 and 0.20 ceramics were prepared by using solid-state reaction technique. The structural characterization of the prepared samples were confirmed by X-ray powder diffraction (XRD) and showed an orthorhombic and monoclinic phase. The nature of Nyquist plot confirms the presence of both grain and grain boundary effects for all Sm doped compounds. The grain resistance decreases with rise in temperature for all the samples and exhibits a typical negative temperature co-efficient of resistance (NTCR) behavior. The ac conductivity spectrum obeys Jonscher's universal power law. The modulus analysis suggests a possible hopping mechanism for electrical transport processes of the materials. The nature of variation of dc conductivity suggests the Arrhenius type of electrical conductivity for all the samples.http://www.sciencedirect.com/science/article/pii/S2468217916301447AurivilliusSolid-state reactionImpedanceElectrical conductivityActivation energy
spellingShingle Sasmitarani Bag
Banarji Behera
Transport phenomena and conductivity mechanism in Sm doped Bi4V2−xSmxO11 ceramics
Journal of Science: Advanced Materials and Devices
Aurivillius
Solid-state reaction
Impedance
Electrical conductivity
Activation energy
title Transport phenomena and conductivity mechanism in Sm doped Bi4V2−xSmxO11 ceramics
title_full Transport phenomena and conductivity mechanism in Sm doped Bi4V2−xSmxO11 ceramics
title_fullStr Transport phenomena and conductivity mechanism in Sm doped Bi4V2−xSmxO11 ceramics
title_full_unstemmed Transport phenomena and conductivity mechanism in Sm doped Bi4V2−xSmxO11 ceramics
title_short Transport phenomena and conductivity mechanism in Sm doped Bi4V2−xSmxO11 ceramics
title_sort transport phenomena and conductivity mechanism in sm doped bi4v2 xsmxo11 ceramics
topic Aurivillius
Solid-state reaction
Impedance
Electrical conductivity
Activation energy
url http://www.sciencedirect.com/science/article/pii/S2468217916301447
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