Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic Systems
Abstract The advent of special types of polymeric semiconductors, known as “polymer blends,” presents new opportunities for the development of next‐generation electronics based on these semiconductors' versatile functionalities in device applications. Although these polymer blends contain semic...
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Wiley
2021-07-01
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Online Access: | https://doi.org/10.1002/advs.202100332 |
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author | Byoungwook Park Hongkyu Kang Yeon Hee Ha Jehan Kim Jong‐Hoon Lee Kilho Yu Sooncheol Kwon Soo‐Young Jang Seok Kim Soyeong Jeong Soonil Hong Seunghwan Byun Soon‐Ki Kwon Yun‐Hi Kim Kwanghee Lee |
author_facet | Byoungwook Park Hongkyu Kang Yeon Hee Ha Jehan Kim Jong‐Hoon Lee Kilho Yu Sooncheol Kwon Soo‐Young Jang Seok Kim Soyeong Jeong Soonil Hong Seunghwan Byun Soon‐Ki Kwon Yun‐Hi Kim Kwanghee Lee |
author_sort | Byoungwook Park |
collection | DOAJ |
description | Abstract The advent of special types of polymeric semiconductors, known as “polymer blends,” presents new opportunities for the development of next‐generation electronics based on these semiconductors' versatile functionalities in device applications. Although these polymer blends contain semiconducting polymers (SPs) mixed with a considerably high content of insulating polymers, few of these blends unexpectedly yield much higher charge carrier mobilities than those of pure SPs. However, the origin of such an enhancement has remained unclear owing to a lack of cases exhibiting definite improvements in charge carrier mobility, and the limited knowledge concerning the underlying mechanism thereof. In this study, the morphological changes and internal nanostructures of polymer blends based on various SP types with different intermolecular interactions in an insulating polystyrene matrix are investigated. Through this investigation, the physical confinement of donor–acceptor type SP chains in a continuous nanoscale network structure surrounded by polystyrenes is shown to induce structural ordering with more straight edge‐on stacked SP chains. Hereby, high‐performance and transparent organic field‐effect transistors with a hole mobility of ≈5.4 cm2 V–1 s–1 and an average transmittance exceeding 72% in the visible range are achieved. |
first_indexed | 2024-12-19T16:00:51Z |
format | Article |
id | doaj.art-341e012fd1864918a516372c99968cd3 |
institution | Directory Open Access Journal |
issn | 2198-3844 |
language | English |
last_indexed | 2024-12-19T16:00:51Z |
publishDate | 2021-07-01 |
publisher | Wiley |
record_format | Article |
series | Advanced Science |
spelling | doaj.art-341e012fd1864918a516372c99968cd32022-12-21T20:14:56ZengWileyAdvanced Science2198-38442021-07-01814n/an/a10.1002/advs.202100332Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic SystemsByoungwook Park0Hongkyu Kang1Yeon Hee Ha2Jehan Kim3Jong‐Hoon Lee4Kilho Yu5Sooncheol Kwon6Soo‐Young Jang7Seok Kim8Soyeong Jeong9Soonil Hong10Seunghwan Byun11Soon‐Ki Kwon12Yun‐Hi Kim13Kwanghee Lee14Heeger Center for Advanced Materials Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaResearch Institute for Solar and Sustainable Energies Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaDepartment of Chemistry and Research Institute for Green Energy Convergence Technology Gyeongsang National University Jinju 52828 Republic of KoreaPohang Accelerator Laboratory Pohang University of Science and Technology Pohang 790‐784 Republic of KoreaHeeger Center for Advanced Materials Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaHeeger Center for Advanced Materials Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaResearch Institute for Solar and Sustainable Energies Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaResearch Institute for Solar and Sustainable Energies Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaHeeger Center for Advanced Materials Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaHeeger Center for Advanced Materials Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaDepartment of Chemistry Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaDepartment of Materials Engineering and Convergence Technology and ERI Gyeongsang National University Jinju 52828 Republic of KoreaDepartment of Chemistry and Research Institute for Green Energy Convergence Technology Gyeongsang National University Jinju 52828 Republic of KoreaHeeger Center for Advanced Materials Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaAbstract The advent of special types of polymeric semiconductors, known as “polymer blends,” presents new opportunities for the development of next‐generation electronics based on these semiconductors' versatile functionalities in device applications. Although these polymer blends contain semiconducting polymers (SPs) mixed with a considerably high content of insulating polymers, few of these blends unexpectedly yield much higher charge carrier mobilities than those of pure SPs. However, the origin of such an enhancement has remained unclear owing to a lack of cases exhibiting definite improvements in charge carrier mobility, and the limited knowledge concerning the underlying mechanism thereof. In this study, the morphological changes and internal nanostructures of polymer blends based on various SP types with different intermolecular interactions in an insulating polystyrene matrix are investigated. Through this investigation, the physical confinement of donor–acceptor type SP chains in a continuous nanoscale network structure surrounded by polystyrenes is shown to induce structural ordering with more straight edge‐on stacked SP chains. Hereby, high‐performance and transparent organic field‐effect transistors with a hole mobility of ≈5.4 cm2 V–1 s–1 and an average transmittance exceeding 72% in the visible range are achieved.https://doi.org/10.1002/advs.202100332organic field‐effect transistorsphysical confinementpolymer blendspolymer nano‐networkstransparent polymer semiconductors |
spellingShingle | Byoungwook Park Hongkyu Kang Yeon Hee Ha Jehan Kim Jong‐Hoon Lee Kilho Yu Sooncheol Kwon Soo‐Young Jang Seok Kim Soyeong Jeong Soonil Hong Seunghwan Byun Soon‐Ki Kwon Yun‐Hi Kim Kwanghee Lee Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic Systems Advanced Science organic field‐effect transistors physical confinement polymer blends polymer nano‐networks transparent polymer semiconductors |
title | Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic Systems |
title_full | Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic Systems |
title_fullStr | Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic Systems |
title_full_unstemmed | Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic Systems |
title_short | Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic Systems |
title_sort | direct observation of confinement effects of semiconducting polymers in polymer blend electronic systems |
topic | organic field‐effect transistors physical confinement polymer blends polymer nano‐networks transparent polymer semiconductors |
url | https://doi.org/10.1002/advs.202100332 |
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