Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation

Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation

The problem of achieving high light extraction efficiency in Al-rich Al _x Ga $_{1-x}$ N is of paramount importance for the realization of AlGaN-based deep ultraviolet (DUV) optoelectronic devices. To solve this problem, we investigate the microscopic mechanism of valence band inversion and light po...

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Bibliographic Details
Main Authors: Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Tong-jun Yu, Bo Shen, Jing Lu, Xihua Wang
Format: Article
Language:English
Published: IOP Publishing 2014-01-01
Series:New Journal of Physics
Subjects:
valence band inversion
spin–orbit coupling
electronic structure
optical property
first-principles calculation
78.66.Fd
Online Access:https://doi.org/10.1088/1367-2630/16/11/113065

Internet

https://doi.org/10.1088/1367-2630/16/11/113065

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