Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation
The problem of achieving high light extraction efficiency in Al-rich Al _x Ga $_{1-x}$ N is of paramount importance for the realization of AlGaN-based deep ultraviolet (DUV) optoelectronic devices. To solve this problem, we investigate the microscopic mechanism of valence band inversion and light po...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IOP Publishing
2014-01-01
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Series: | New Journal of Physics |
Subjects: | |
Online Access: | https://doi.org/10.1088/1367-2630/16/11/113065 |