Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging

Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging

In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated individual pixel detector having a cut-off wavelen...

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Bibliographic Details
Main Authors: Maxime Bouschet, Ulises Zavala-Moran, Vignesh Arounassalame, Rodolphe Alchaar, Clara Bataillon, Isabelle Ribet-Mohamed, Francisco de Anda-Salazar, Jean-Philippe Perez, Nicolas Péré-Laperne, Philippe Christol
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Photonics
Subjects:
mid-wave infrared quantum detector
barrier structure
Ga-free type-II superlattice
pixel etching
Online Access:https://www.mdpi.com/2304-6732/8/6/194

Internet

https://www.mdpi.com/2304-6732/8/6/194

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