Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging
In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated individual pixel detector having a cut-off wavelen...
Main Authors: | Maxime Bouschet, Ulises Zavala-Moran, Vignesh Arounassalame, Rodolphe Alchaar, Clara Bataillon, Isabelle Ribet-Mohamed, Francisco de Anda-Salazar, Jean-Philippe Perez, Nicolas Péré-Laperne, Philippe Christol |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-05-01
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Series: | Photonics |
Subjects: | |
Online Access: | https://www.mdpi.com/2304-6732/8/6/194 |
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