Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC
Epitaxial graphene on SiC without substrate interaction is viewed as one of the most promising two-dimensional (2D) materials in the microelectronics field. In this study, quasi-free-standing bilayer epitaxial graphene (QFSBEG) on SiC was fabricated by H<sub>2</sub> intercalation under d...
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MDPI AG
2022-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/3/346 |
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| author | Li Sun Peng Wang Xuejian Xie Xiufang Chen Fapeng Yu Yanlu Li Xiangang Xu Xian Zhao |
| author_facet | Li Sun Peng Wang Xuejian Xie Xiufang Chen Fapeng Yu Yanlu Li Xiangang Xu Xian Zhao |
| author_sort | Li Sun |
| collection | DOAJ |
| description | Epitaxial graphene on SiC without substrate interaction is viewed as one of the most promising two-dimensional (2D) materials in the microelectronics field. In this study, quasi-free-standing bilayer epitaxial graphene (QFSBEG) on SiC was fabricated by H<sub>2</sub> intercalation under different time periods, and the temperature-dependent Raman spectra were recorded to evaluate the intrinsic structural difference generated by H<sub>2</sub> time duration. The G peak thermal lineshift rates <i>dω/dT</i> showed that the H<sub>2</sub> intercalation significantly weakened the pinning effect in epitaxial graphene. Furthermore, the G peak <i>dω/dT</i> value showed a perspicuous pinning effect disparity of QFSBEG samples. Additionally, the anharmonic phonon effect was investigated from the Raman lineshift of peaks. The physical mechanism responsible for dominating the G-mode temperature-dependent behavior among samples with different substrate coupling effects was elucidated. The phonon decay process of different samples was compared as the temperature increased. The evolution from in situ grown graphene to QFSBEG was determined. This study will expand the understanding of QFSBEG and pave a new way for its fabrication. |
| first_indexed | 2024-03-09T23:25:10Z |
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| id | doaj.art-3434cd52e72349b5a606b831eba9f963 |
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| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T23:25:10Z |
| publishDate | 2022-01-01 |
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| spelling | doaj.art-3434cd52e72349b5a606b831eba9f9632023-11-23T17:19:16ZengMDPI AGNanomaterials2079-49912022-01-0112334610.3390/nano12030346Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiCLi Sun0Peng Wang1Xuejian Xie2Xiufang Chen3Fapeng Yu4Yanlu Li5Xiangang Xu6Xian Zhao7State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering, Shandong University, Jinan 250100, ChinaState Key Laboratory of Crystal Materials, Center for Optics Research and Engineering, Shandong University, Jinan 250100, ChinaState Key Laboratory of Crystal Materials, Center for Optics Research and Engineering, Shandong University, Jinan 250100, ChinaState Key Laboratory of Crystal Materials, Center for Optics Research and Engineering, Shandong University, Jinan 250100, ChinaState Key Laboratory of Crystal Materials, Center for Optics Research and Engineering, Shandong University, Jinan 250100, ChinaState Key Laboratory of Crystal Materials, Center for Optics Research and Engineering, Shandong University, Jinan 250100, ChinaState Key Laboratory of Crystal Materials, Center for Optics Research and Engineering, Shandong University, Jinan 250100, ChinaState Key Laboratory of Crystal Materials, Center for Optics Research and Engineering, Shandong University, Jinan 250100, ChinaEpitaxial graphene on SiC without substrate interaction is viewed as one of the most promising two-dimensional (2D) materials in the microelectronics field. In this study, quasi-free-standing bilayer epitaxial graphene (QFSBEG) on SiC was fabricated by H<sub>2</sub> intercalation under different time periods, and the temperature-dependent Raman spectra were recorded to evaluate the intrinsic structural difference generated by H<sub>2</sub> time duration. The G peak thermal lineshift rates <i>dω/dT</i> showed that the H<sub>2</sub> intercalation significantly weakened the pinning effect in epitaxial graphene. Furthermore, the G peak <i>dω/dT</i> value showed a perspicuous pinning effect disparity of QFSBEG samples. Additionally, the anharmonic phonon effect was investigated from the Raman lineshift of peaks. The physical mechanism responsible for dominating the G-mode temperature-dependent behavior among samples with different substrate coupling effects was elucidated. The phonon decay process of different samples was compared as the temperature increased. The evolution from in situ grown graphene to QFSBEG was determined. This study will expand the understanding of QFSBEG and pave a new way for its fabrication.https://www.mdpi.com/2079-4991/12/3/346quasi-free-standing epitaxial grapheneH<sub>2</sub> intercalationevolution process |
| spellingShingle | Li Sun Peng Wang Xuejian Xie Xiufang Chen Fapeng Yu Yanlu Li Xiangang Xu Xian Zhao Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC Nanomaterials quasi-free-standing epitaxial graphene H<sub>2</sub> intercalation evolution process |
| title | Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC |
| title_full | Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC |
| title_fullStr | Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC |
| title_full_unstemmed | Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC |
| title_short | Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC |
| title_sort | pinning and anharmonic phonon effect of quasi free standing bilayer epitaxial graphene on sic |
| topic | quasi-free-standing epitaxial graphene H<sub>2</sub> intercalation evolution process |
| url | https://www.mdpi.com/2079-4991/12/3/346 |
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