| Summary: | A single crystal of a topological material, CoTe<sub>2-δ</sub>, has been grown via the chemical vapor transport method for a structural and electronic transport study. Single-crystal X-ray diffraction, powder X-ray diffraction, and high-resolution scanning electron microscope measurements confirm the high quality of the as-grown single crystals. In a high-resolution scanning electron microscopy study, a clear layered feature of the trigonal CoTe<sub>2-δ</sub> crystal was observed. Fractal features and mosaic-type nanostructures were observed on the as-grown surface and cleaved surface, respectively. The trigonal CoTe<sub>2-δ</sub> demonstrates a metallic ground state in transport measurements, with a typical carrier’s concentration in a 10<sup>21</sup> cm<sup>−3</sup> magnitude and a residual resistivity ratio of 1.6. Below 10 K, trigonal CoTe<sub>2-δ</sub> contains quite complicated magnetoresistance behavior as a result of the competing effect between Dirac states and possible spin fluctuations.
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