Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices

Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for l...

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Main Authors: Junji Tominaga, Alexander V Kolobov, Paul J Fons, Xiaomin Wang, Yuta Saito, Takashi Nakano, Muneaki Hase, Shuichi Murakami, Jens Herfort, Yukihiko Takagaki
Format: Article
Language:English
Published: Taylor & Francis Group 2015-02-01
Series:Science and Technology of Advanced Materials
Subjects:
Online Access:http://dx.doi.org/10.1088/1468-6996/16/1/014402
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author Junji Tominaga
Alexander V Kolobov
Paul J Fons
Xiaomin Wang
Yuta Saito
Takashi Nakano
Muneaki Hase
Shuichi Murakami
Jens Herfort
Yukihiko Takagaki
author_facet Junji Tominaga
Alexander V Kolobov
Paul J Fons
Xiaomin Wang
Yuta Saito
Takashi Nakano
Muneaki Hase
Shuichi Murakami
Jens Herfort
Yukihiko Takagaki
author_sort Junji Tominaga
collection DOAJ
description Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe)2(Sb2Te3)l]m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.
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spelling doaj.art-34536dafa8c64973b744457b439da4e52022-12-21T18:32:57ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142015-02-0116110.1088/1468-6996/16/1/01440211661235Giant multiferroic effects in topological GeTe-Sb2Te3 superlatticesJunji Tominaga0Alexander V Kolobov1Paul J Fons2Xiaomin Wang3Yuta Saito4Takashi Nakano5Muneaki Hase6Shuichi Murakami7Jens Herfort8Yukihiko Takagaki9National Institute of Advanced Industrial Science & Technology (AIST)National Institute of Advanced Industrial Science & Technology (AIST)National Institute of Advanced Industrial Science & Technology (AIST)National Institute of Advanced Industrial Science & Technology (AIST)National Institute of Advanced Industrial Science & Technology (AIST)National Institute of Advanced Industrial Science & Technology (AIST)University of TsukubaTokyo Institute of TechnologyPaul-Drude-Institut für FestkörperelektronikPaul-Drude-Institut für FestkörperelektronikMultiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe)2(Sb2Te3)l]m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.http://dx.doi.org/10.1088/1468-6996/16/1/014402multiferroicsmagnetoresistancetopological insulatorchalcogenide superlatticegete-sb2te3phase change memoryspintronicscomputer simulation
spellingShingle Junji Tominaga
Alexander V Kolobov
Paul J Fons
Xiaomin Wang
Yuta Saito
Takashi Nakano
Muneaki Hase
Shuichi Murakami
Jens Herfort
Yukihiko Takagaki
Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices
Science and Technology of Advanced Materials
multiferroics
magnetoresistance
topological insulator
chalcogenide superlattice
gete-sb2te3
phase change memory
spintronics
computer simulation
title Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices
title_full Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices
title_fullStr Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices
title_full_unstemmed Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices
title_short Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices
title_sort giant multiferroic effects in topological gete sb2te3 superlattices
topic multiferroics
magnetoresistance
topological insulator
chalcogenide superlattice
gete-sb2te3
phase change memory
spintronics
computer simulation
url http://dx.doi.org/10.1088/1468-6996/16/1/014402
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