Annealing and N<sub>2</sub> Plasma Treatment to Minimize Corrosion of SiC-Coated Glass-Ceramics

To improve the chemical durability of SiC-based coatings on glass-ceramics, the effects of annealing and N<sub>2</sub> plasma treatment were investigated. Fluorapatite glass-ceramic disks were coated with SiC via plasma-enhanced chemical vapor deposition (PECVD), treated with N<sub>...

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Bibliographic Details
Main Authors: Chaker Fares, Randy Elhassani, Jessica Partain, Shu-Min Hsu, Valentin Craciun, Fan Ren, Josephine F. Esquivel-Upshaw
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Materials
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Online Access:https://www.mdpi.com/1996-1944/13/10/2375
Description
Summary:To improve the chemical durability of SiC-based coatings on glass-ceramics, the effects of annealing and N<sub>2</sub> plasma treatment were investigated. Fluorapatite glass-ceramic disks were coated with SiC via plasma-enhanced chemical vapor deposition (PECVD), treated with N<sub>2</sub> plasma followed by an annealing step, characterized, and then immersed in a pH 10 buffer solution for 30 days to study coating delamination. Post-deposition annealing was found to densify the deposited SiC and lessen SiC delamination during the pH 10 immersion. When the SiC was treated with a N<sub>2</sub> plasma for 10 min, the bulk properties of the SiC coating were not affected but surface pores were sealed, slightly improving the SiC’s chemical durability. By combining N<sub>2</sub> plasma-treatment with a post-deposition annealing step, film delamination was reduced from 94% to 2.9% after immersion in a pH 10 solution for 30 days. X-ray Photoelectron spectroscopy (XPS) detected a higher concentration of oxygen on the surface of the plasma treated films, indicating a thin SiO<sub>2</sub> layer was formed and could have assisted in pore sealing. In conclusion, post-deposition annealing and N<sub>2</sub> plasma treatment where shown to significantly improve the chemical durability of PECVD deposited SiC films used as a coating for glass-ceramics.
ISSN:1996-1944