Resistive Switching Characteristic Improvement in a Single-Walled Carbon Nanotube Random Network Embedded Hydrogen Silsesquioxane Thin Films for Flexible Memristors

Resistive Switching Characteristic Improvement in a Single-Walled Carbon Nanotube Random Network Embedded Hydrogen Silsesquioxane Thin Films for Flexible Memristors

In this study, we evaluated the improved memristive switching characteristics of hydrogen silsesquioxane (HSQ) nanocomposites embedded with a single-walled carbon nanotube (SWCNT) random network. A low-temperature solution process was implemented using a flexible memristor device on a polyethylene n...

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Bibliographic Details
Main Authors: Shin-Yi Min, Won-Ju Cho
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:International Journal of Molecular Sciences
Subjects:
hydrogen silsesquioxane
single-walled carbon nanotube random network
nonvolatile multiple-resistance states
memristor
synaptic weight modulation
Online Access:https://www.mdpi.com/1422-0067/22/7/3390

Internet

https://www.mdpi.com/1422-0067/22/7/3390

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