Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers

Abstract Monolayers of layered materials, such as graphite and molybdenum dichalcogenides, have been the focus of materials science in the last decades. Here, we reveal benign stability and intriguing physical properties in the thinnest monolayer wurtzite (wz) semiconductors, which can be exfoliated...

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Main Authors: Zhuang Ma, Pu Huang, Jin Li, Peng Zhang, Jiaxin Zheng, Wen Xiong, Fei Wang, Xiuwen Zhang
Format: Article
Language:English
Published: Nature Portfolio 2022-03-01
Series:npj Computational Materials
Online Access:https://doi.org/10.1038/s41524-022-00740-8
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author Zhuang Ma
Pu Huang
Jin Li
Peng Zhang
Jiaxin Zheng
Wen Xiong
Fei Wang
Xiuwen Zhang
author_facet Zhuang Ma
Pu Huang
Jin Li
Peng Zhang
Jiaxin Zheng
Wen Xiong
Fei Wang
Xiuwen Zhang
author_sort Zhuang Ma
collection DOAJ
description Abstract Monolayers of layered materials, such as graphite and molybdenum dichalcogenides, have been the focus of materials science in the last decades. Here, we reveal benign stability and intriguing physical properties in the thinnest monolayer wurtzite (wz) semiconductors, which can be exfoliated from their bulk and stacked to reform the wz crystals. The candidate ZnX and CdX (X = S, Se, Te) monolayers possess low cleavage energy and direct bandgaps, which harbor strongly coupled ferroelectricity and ferroelasticity with low transition barriers, giant in-plane negative Poisson’s ratio, as well as giant Rashba spin splitting, enabling the co-tunability of spin splitting and auxetic magnitudes via multiferroic switching. These wz monolayers can be used as building blocks of devices structures, due to their inherent “self-healable” capacity, which offer more flexibility for semiconductor fabrication and provide a natural platform to probe the interplay of multiple physical effects, bringing light into the rich physics in tetrahedral semiconductors.
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spelling doaj.art-34ce9ae324cf40dc92a418deb9a940ba2022-12-21T21:10:40ZengNature Portfolionpj Computational Materials2057-39602022-03-018111110.1038/s41524-022-00740-8Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayersZhuang Ma0Pu Huang1Jin Li2Peng Zhang3Jiaxin Zheng4Wen Xiong5Fei Wang6Xiuwen Zhang7Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen UniversityKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen UniversityKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen UniversityKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen UniversitySchool of Advanced Materials, Peking University, Shenzhen Graduate SchoolChongqing Institute of Green and Intelligent Technology, Chinese Academy of SciencesSchool of Physics and Microelectronics, Zhengzhou UniversityKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen UniversityAbstract Monolayers of layered materials, such as graphite and molybdenum dichalcogenides, have been the focus of materials science in the last decades. Here, we reveal benign stability and intriguing physical properties in the thinnest monolayer wurtzite (wz) semiconductors, which can be exfoliated from their bulk and stacked to reform the wz crystals. The candidate ZnX and CdX (X = S, Se, Te) monolayers possess low cleavage energy and direct bandgaps, which harbor strongly coupled ferroelectricity and ferroelasticity with low transition barriers, giant in-plane negative Poisson’s ratio, as well as giant Rashba spin splitting, enabling the co-tunability of spin splitting and auxetic magnitudes via multiferroic switching. These wz monolayers can be used as building blocks of devices structures, due to their inherent “self-healable” capacity, which offer more flexibility for semiconductor fabrication and provide a natural platform to probe the interplay of multiple physical effects, bringing light into the rich physics in tetrahedral semiconductors.https://doi.org/10.1038/s41524-022-00740-8
spellingShingle Zhuang Ma
Pu Huang
Jin Li
Peng Zhang
Jiaxin Zheng
Wen Xiong
Fei Wang
Xiuwen Zhang
Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers
npj Computational Materials
title Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers
title_full Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers
title_fullStr Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers
title_full_unstemmed Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers
title_short Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers
title_sort multiferroicity and giant in plane negative poisson s ratio in wurtzite monolayers
url https://doi.org/10.1038/s41524-022-00740-8
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