Geometrical Characterisation of TiO<sub>2</sub>-rGO Field-Effect Transistor as a Platform for Biosensing Applications
The performance of the graphene-based field-effect transistor (FET) as a biosensor is based on the output drain current (I<sub>d</sub>). In this work, the signal-to-noise ratio (SNR) was investigated to obtain a high-performance device that produces a higher I<sub>d</sub> val...
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MDPI AG
2023-08-01
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| Online Access: | https://www.mdpi.com/2072-666X/14/9/1664 |
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| author | Anis Amirah Alim Roharsyafinaz Roslan Sh. Nadzirah Lina Khalida Saidi P. Susthitha Menon Ismail Aziah Dee Chang Fu Siti Aishah Sulaiman Nor Azian Abdul Murad Azrul Azlan Hamzah |
| author_facet | Anis Amirah Alim Roharsyafinaz Roslan Sh. Nadzirah Lina Khalida Saidi P. Susthitha Menon Ismail Aziah Dee Chang Fu Siti Aishah Sulaiman Nor Azian Abdul Murad Azrul Azlan Hamzah |
| author_sort | Anis Amirah Alim |
| collection | DOAJ |
| description | The performance of the graphene-based field-effect transistor (FET) as a biosensor is based on the output drain current (I<sub>d</sub>). In this work, the signal-to-noise ratio (SNR) was investigated to obtain a high-performance device that produces a higher I<sub>d</sub> value. Using the finite element method, a novel top-gate FET was developed in a three-dimensional (3D) simulation model with the titanium dioxide-reduced graphene oxide (TiO<sub>2</sub>-rGO) nanocomposite as the transducer material, which acts as a platform for biosensing application. Using the Taguchi mixed-level method in Minitab software (Version 16.1.1), eighteen 3D models were designed based on an orthogonal array L<sub>18</sub> (6<sup>1</sup>3<sup>4</sup>), with five factors, and three and six levels. The parameters considered were the channel length, electrode length, electrode width, electrode thickness and electrode type. The device was fabricated using the conventional photolithography patterning technique and the metal lift-off method. The material was synthesised using the modified sol–gel method and spin-coated on top of the device. According to the results of the ANOVA, the channel length contributed the most, with 63.11%, indicating that it was the most significant factor in producing a higher I<sub>d</sub> value. The optimum condition for the highest I<sub>d</sub> value was at a channel length of 3 µm and an electrode size of 3 µm × 20 µm, with a thickness of 50 nm for the Ag electrode. The electrical measurement in both the simulation and experiment under optimal conditions showed a similar trend, and the difference between the curves was calculated to be 28.7%. Raman analyses were performed to validate the quality of TiO<sub>2</sub>-rGO. |
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| id | doaj.art-34eaff59d75d4f5db249ba9527f2b9ab |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T22:26:51Z |
| publishDate | 2023-08-01 |
| publisher | MDPI AG |
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| series | Micromachines |
| spelling | doaj.art-34eaff59d75d4f5db249ba9527f2b9ab2023-11-19T11:58:55ZengMDPI AGMicromachines2072-666X2023-08-01149166410.3390/mi14091664Geometrical Characterisation of TiO<sub>2</sub>-rGO Field-Effect Transistor as a Platform for Biosensing ApplicationsAnis Amirah Alim0Roharsyafinaz Roslan1Sh. Nadzirah2Lina Khalida Saidi3P. Susthitha Menon4Ismail Aziah5Dee Chang Fu6Siti Aishah Sulaiman7Nor Azian Abdul Murad8Azrul Azlan Hamzah9Institute of Microengineering and Nanoelectronics, National University of Malaysia, Bangi 43600, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics, National University of Malaysia, Bangi 43600, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics, National University of Malaysia, Bangi 43600, Selangor, MalaysiaUKM Medical Molecular Biology Institute (UMBI), National University of Malaysia, Cheras 56000, Kuala Lumpur, MalaysiaInstitute of Microengineering and Nanoelectronics, National University of Malaysia, Bangi 43600, Selangor, MalaysiaInstitute for Research in Molecular Medicine (INFORMM), Health Campus, Universiti Sains Malaysia, Kubang Kerian 16150, Kelantan, MalaysiaInstitute of Microengineering and Nanoelectronics, National University of Malaysia, Bangi 43600, Selangor, MalaysiaUKM Medical Molecular Biology Institute (UMBI), National University of Malaysia, Cheras 56000, Kuala Lumpur, MalaysiaUKM Medical Molecular Biology Institute (UMBI), National University of Malaysia, Cheras 56000, Kuala Lumpur, MalaysiaInstitute of Microengineering and Nanoelectronics, National University of Malaysia, Bangi 43600, Selangor, MalaysiaThe performance of the graphene-based field-effect transistor (FET) as a biosensor is based on the output drain current (I<sub>d</sub>). In this work, the signal-to-noise ratio (SNR) was investigated to obtain a high-performance device that produces a higher I<sub>d</sub> value. Using the finite element method, a novel top-gate FET was developed in a three-dimensional (3D) simulation model with the titanium dioxide-reduced graphene oxide (TiO<sub>2</sub>-rGO) nanocomposite as the transducer material, which acts as a platform for biosensing application. Using the Taguchi mixed-level method in Minitab software (Version 16.1.1), eighteen 3D models were designed based on an orthogonal array L<sub>18</sub> (6<sup>1</sup>3<sup>4</sup>), with five factors, and three and six levels. The parameters considered were the channel length, electrode length, electrode width, electrode thickness and electrode type. The device was fabricated using the conventional photolithography patterning technique and the metal lift-off method. The material was synthesised using the modified sol–gel method and spin-coated on top of the device. According to the results of the ANOVA, the channel length contributed the most, with 63.11%, indicating that it was the most significant factor in producing a higher I<sub>d</sub> value. The optimum condition for the highest I<sub>d</sub> value was at a channel length of 3 µm and an electrode size of 3 µm × 20 µm, with a thickness of 50 nm for the Ag electrode. The electrical measurement in both the simulation and experiment under optimal conditions showed a similar trend, and the difference between the curves was calculated to be 28.7%. Raman analyses were performed to validate the quality of TiO<sub>2</sub>-rGO.https://www.mdpi.com/2072-666X/14/9/1664field-effect transistorTaguchiTiO<sub>2</sub>-rGOANOVADOE |
| spellingShingle | Anis Amirah Alim Roharsyafinaz Roslan Sh. Nadzirah Lina Khalida Saidi P. Susthitha Menon Ismail Aziah Dee Chang Fu Siti Aishah Sulaiman Nor Azian Abdul Murad Azrul Azlan Hamzah Geometrical Characterisation of TiO<sub>2</sub>-rGO Field-Effect Transistor as a Platform for Biosensing Applications Micromachines field-effect transistor Taguchi TiO<sub>2</sub>-rGO ANOVA DOE |
| title | Geometrical Characterisation of TiO<sub>2</sub>-rGO Field-Effect Transistor as a Platform for Biosensing Applications |
| title_full | Geometrical Characterisation of TiO<sub>2</sub>-rGO Field-Effect Transistor as a Platform for Biosensing Applications |
| title_fullStr | Geometrical Characterisation of TiO<sub>2</sub>-rGO Field-Effect Transistor as a Platform for Biosensing Applications |
| title_full_unstemmed | Geometrical Characterisation of TiO<sub>2</sub>-rGO Field-Effect Transistor as a Platform for Biosensing Applications |
| title_short | Geometrical Characterisation of TiO<sub>2</sub>-rGO Field-Effect Transistor as a Platform for Biosensing Applications |
| title_sort | geometrical characterisation of tio sub 2 sub rgo field effect transistor as a platform for biosensing applications |
| topic | field-effect transistor Taguchi TiO<sub>2</sub>-rGO ANOVA DOE |
| url | https://www.mdpi.com/2072-666X/14/9/1664 |
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