Recent Progress in Two-Dimensional MoTe<sub>2</sub> Hetero-Phase Homojunctions

With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growin...

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Bibliographic Details
Main Authors: Jing Guo, Kai Liu
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/12/1/110
Description
Summary:With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe<sub>2</sub> exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T′ and vice versa, owing to the extremely small energy barrier between these two phases. MoTe<sub>2</sub> thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe<sub>2</sub> hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe<sub>2</sub>, demonstrate the approaches to the construction of 2D MoTe<sub>2</sub> hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field.
ISSN:2079-4991