Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption
The femtosecond‐pulsed laser processed black silicon (fs‐bSi) features high absorptance in a wide spectral range but suffers from high amount of laser induced damage as compared with bSi fabricated by other methods. Here, the aim is to minimize the charge carrier recombination in the fs‐bSi caused b...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2022-04-01
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| Series: | Advanced Photonics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/adpr.202100234 |
| _version_ | 1818061295223570432 |
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| author | Xiaolong Liu Behrad Radfar Kexun Chen Toni P. Pasanen Ville Vähänissi Hele Savin |
| author_facet | Xiaolong Liu Behrad Radfar Kexun Chen Toni P. Pasanen Ville Vähänissi Hele Savin |
| author_sort | Xiaolong Liu |
| collection | DOAJ |
| description | The femtosecond‐pulsed laser processed black silicon (fs‐bSi) features high absorptance in a wide spectral range but suffers from high amount of laser induced damage as compared with bSi fabricated by other methods. Here, the aim is to minimize the charge carrier recombination in the fs‐bSi caused by laser damage as indicated by the sub‐bandgap absorption and as quantified by the carrier lifetime, while maintaining high absorption in the above bandgap. The effect of the laser parameters, including the focal position, the average power, and the scan speed are systematically studied by characterizing the surface morphology, the absorptance spectra, and the minority‐carrier recombination lifetime. For the surface passivation of fs‐bSi, the well‐established atomic layer deposited (ALD) Al2O3 is used. The results show that with the tailored laser parameters, high average absorptance of about 96% in the visible range and minority carrier lifetime of 54 μs at the injection level of Δn = 1 · 1015 cm−3 can be obtained simultaneously. This work paves the way toward high‐performance broadband optoelectronic devices based on surface passivated fs‐bSi. |
| first_indexed | 2024-12-10T13:46:02Z |
| format | Article |
| id | doaj.art-3558b5480c6a4c4f80230504c05d9389 |
| institution | Directory Open Access Journal |
| issn | 2699-9293 |
| language | English |
| last_indexed | 2024-12-10T13:46:02Z |
| publishDate | 2022-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj.art-3558b5480c6a4c4f80230504c05d93892022-12-22T01:46:26ZengWiley-VCHAdvanced Photonics Research2699-92932022-04-0134n/an/a10.1002/adpr.202100234Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap AbsorptionXiaolong Liu0Behrad Radfar1Kexun Chen2Toni P. Pasanen3Ville Vähänissi4Hele Savin5Department of Electronics and Nanoengineering Aalto University Tietotie 3 FI-02150 Espoo FinlandDepartment of Electronics and Nanoengineering Aalto University Tietotie 3 FI-02150 Espoo FinlandDepartment of Electronics and Nanoengineering Aalto University Tietotie 3 FI-02150 Espoo FinlandDepartment of Electronics and Nanoengineering Aalto University Tietotie 3 FI-02150 Espoo FinlandDepartment of Electronics and Nanoengineering Aalto University Tietotie 3 FI-02150 Espoo FinlandDepartment of Electronics and Nanoengineering Aalto University Tietotie 3 FI-02150 Espoo FinlandThe femtosecond‐pulsed laser processed black silicon (fs‐bSi) features high absorptance in a wide spectral range but suffers from high amount of laser induced damage as compared with bSi fabricated by other methods. Here, the aim is to minimize the charge carrier recombination in the fs‐bSi caused by laser damage as indicated by the sub‐bandgap absorption and as quantified by the carrier lifetime, while maintaining high absorption in the above bandgap. The effect of the laser parameters, including the focal position, the average power, and the scan speed are systematically studied by characterizing the surface morphology, the absorptance spectra, and the minority‐carrier recombination lifetime. For the surface passivation of fs‐bSi, the well‐established atomic layer deposited (ALD) Al2O3 is used. The results show that with the tailored laser parameters, high average absorptance of about 96% in the visible range and minority carrier lifetime of 54 μs at the injection level of Δn = 1 · 1015 cm−3 can be obtained simultaneously. This work paves the way toward high‐performance broadband optoelectronic devices based on surface passivated fs‐bSi.https://doi.org/10.1002/adpr.202100234black siliconfemtosecond laserminority carrier lifetimeoptical absorptionrecombinationsurface morphology |
| spellingShingle | Xiaolong Liu Behrad Radfar Kexun Chen Toni P. Pasanen Ville Vähänissi Hele Savin Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption Advanced Photonics Research black silicon femtosecond laser minority carrier lifetime optical absorption recombination surface morphology |
| title | Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption |
| title_full | Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption |
| title_fullStr | Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption |
| title_full_unstemmed | Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption |
| title_short | Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption |
| title_sort | tailoring femtosecond laser processed black silicon for reduced carrier recombination combined with 95 above bandgap absorption |
| topic | black silicon femtosecond laser minority carrier lifetime optical absorption recombination surface morphology |
| url | https://doi.org/10.1002/adpr.202100234 |
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