Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption

Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption

The femtosecond‐pulsed laser processed black silicon (fs‐bSi) features high absorptance in a wide spectral range but suffers from high amount of laser induced damage as compared with bSi fabricated by other methods. Here, the aim is to minimize the charge carrier recombination in the fs‐bSi caused b...

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Bibliographic Details
Main Authors: Xiaolong Liu, Behrad Radfar, Kexun Chen, Toni P. Pasanen, Ville Vähänissi, Hele Savin
Format: Article
Language:English
Published: Wiley-VCH 2022-04-01
Series:Advanced Photonics Research
Subjects:
black silicon
femtosecond laser
minority carrier lifetime
optical absorption
recombination
surface morphology
Online Access:https://doi.org/10.1002/adpr.202100234

Internet

https://doi.org/10.1002/adpr.202100234

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