HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism
Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their exceptional electronic properties of subthermionic subt...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10336778/ |
| _version_ | 1797316043679465472 |
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| author | Qianqian Huang Shaodi Xu Ru Huang |
| author_facet | Qianqian Huang Shaodi Xu Ru Huang |
| author_sort | Qianqian Huang |
| collection | DOAJ |
| description | Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their exceptional electronic properties of subthermionic subthreshold swing. However, fundamental limitations in drive current have hindered such technology encountering for high-performance and high-speed operations, especially for silicon-based device. Here, we demonstrate a novel pathway of integrating tunneling and thermionic emission mechanisms together, to circumvent their respective limitation and design a hybrid adaptively modulated FET (HamFET) that orients power saving and performance enhancement simultaneously. This transistor architecture, utilizing a nested source configuration without cost or area penalties, exhibits both ultrasteep (subthermionic) subthreshold swing and the largest “on” and “off” current ratio over the state-of-the-art tunneling transistors. Our design methodology of hybrid switching mechanism is also applicable to other mechanism, material, and architecture systems, opening the doors to a range of high-speed application opportunities for ultralow-power but performance-insufficient electronics. |
| first_indexed | 2024-03-08T03:12:33Z |
| format | Article |
| id | doaj.art-3560bc2633c2410c801a631b922e036e |
| institution | Directory Open Access Journal |
| issn | 2329-9231 |
| language | English |
| last_indexed | 2024-03-08T03:12:33Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| spelling | doaj.art-3560bc2633c2410c801a631b922e036e2024-02-13T00:01:46ZengIEEEIEEE Journal on Exploratory Solid-State Computational Devices and Circuits2329-92312024-01-01101710.1109/JXCDC.2023.333848010336778HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching MechanismQianqian Huang0https://orcid.org/0000-0002-3714-8581Shaodi Xu1Ru Huang2School of Integrated Circuits, Peking University, Beijing, ChinaSchool of Integrated Circuits, Peking University, Beijing, ChinaSchool of Integrated Circuits, Peking University, Beijing, ChinaField-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their exceptional electronic properties of subthermionic subthreshold swing. However, fundamental limitations in drive current have hindered such technology encountering for high-performance and high-speed operations, especially for silicon-based device. Here, we demonstrate a novel pathway of integrating tunneling and thermionic emission mechanisms together, to circumvent their respective limitation and design a hybrid adaptively modulated FET (HamFET) that orients power saving and performance enhancement simultaneously. This transistor architecture, utilizing a nested source configuration without cost or area penalties, exhibits both ultrasteep (subthermionic) subthreshold swing and the largest “on” and “off” current ratio over the state-of-the-art tunneling transistors. Our design methodology of hybrid switching mechanism is also applicable to other mechanism, material, and architecture systems, opening the doors to a range of high-speed application opportunities for ultralow-power but performance-insufficient electronics.https://ieeexplore.ieee.org/document/10336778/Hybrid switching mechanismtunneling transistorsultralow-power electronicsultrasteep subthreshold swing |
| spellingShingle | Qianqian Huang Shaodi Xu Ru Huang HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Hybrid switching mechanism tunneling transistors ultralow-power electronics ultrasteep subthreshold swing |
| title | HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism |
| title_full | HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism |
| title_fullStr | HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism |
| title_full_unstemmed | HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism |
| title_short | HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism |
| title_sort | hamfet a high performance subthermionic transistor through incorporating hybrid switching mechanism |
| topic | Hybrid switching mechanism tunneling transistors ultralow-power electronics ultrasteep subthreshold swing |
| url | https://ieeexplore.ieee.org/document/10336778/ |
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