Effect of multi-donor doping on structure and electrical properties of DC ZnO varistor ceramics
Direct-current ZnO varistor ceramic samples were prepared by traditional ceramic sintering process with B2O3, In2O3 and Al2O3multi-donor doping. The effects of B2O3 doping ratio (0.1%-0.4%, molar fraction) on the microstructure and electrical properties of direct-current ZnO varistor ceramics were i...
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| Format: | Article |
| Language: | zho |
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Journal of Materials Engineering
2022-08-01
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| Series: | Cailiao gongcheng |
| Subjects: | |
| Online Access: | http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2020.001042 |
| _version_ | 1797964522513760256 |
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| author | CHENG Kuan ZHAO Hongfeng ZHOU Yuanxiang |
| author_facet | CHENG Kuan ZHAO Hongfeng ZHOU Yuanxiang |
| author_sort | CHENG Kuan |
| collection | DOAJ |
| description | Direct-current ZnO varistor ceramic samples were prepared by traditional ceramic sintering process with B2O3, In2O3 and Al2O3multi-donor doping. The effects of B2O3 doping ratio (0.1%-0.4%, molar fraction) on the microstructure and electrical properties of direct-current ZnO varistor ceramics were investigated. The phase, morphology, composition and electrical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and digital source meter. The results show that the co-doping of multi-donor dopants (Al2O3, In2O3 and B2O3) can significantly improve the comprehensive properties of direct-current ZnO varistor ceramics. Al3+ improves the conductivity of the samples and reduces the residual voltage ratio of the samples; In3+ restricts the growth of grains through pinning effect and improves the voltage gradient of the samples; the doping of B3+ improves the surface state density of the sample, increases the barrier height and effectively suppresses the increase in leakage current. When the doping amount of B2O3 is 0.3%, the comprehensive performance of the sample is the best: the voltage gradient is 486 V/mm, the leakage current density is 0.58 μA/cm2, the nonlinear coefficient is 85, and the residual voltage ratio is 1.55. |
| first_indexed | 2024-04-11T01:45:19Z |
| format | Article |
| id | doaj.art-35b9999164664d1fb55f8e2538f1ebbd |
| institution | Directory Open Access Journal |
| issn | 1001-4381 |
| language | zho |
| last_indexed | 2024-04-11T01:45:19Z |
| publishDate | 2022-08-01 |
| publisher | Journal of Materials Engineering |
| record_format | Article |
| series | Cailiao gongcheng |
| spelling | doaj.art-35b9999164664d1fb55f8e2538f1ebbd2023-01-03T07:40:27ZzhoJournal of Materials EngineeringCailiao gongcheng1001-43812022-08-0150815315910.11868/j.issn.1001-4381.2020.00104220220814Effect of multi-donor doping on structure and electrical properties of DC ZnO varistor ceramicsCHENG Kuan0ZHAO Hongfeng1ZHOU Yuanxiang2The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment, School of Electrical Engineering, Xinjiang University, Urumqi 830046, ChinaThe Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment, School of Electrical Engineering, Xinjiang University, Urumqi 830046, ChinaState Key Laboratory of Control and Simulation of Power Systems and Generation Equipment, Department of Electrical Engineering, Tsinghua University, Beijing 100084, ChinaDirect-current ZnO varistor ceramic samples were prepared by traditional ceramic sintering process with B2O3, In2O3 and Al2O3multi-donor doping. The effects of B2O3 doping ratio (0.1%-0.4%, molar fraction) on the microstructure and electrical properties of direct-current ZnO varistor ceramics were investigated. The phase, morphology, composition and electrical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and digital source meter. The results show that the co-doping of multi-donor dopants (Al2O3, In2O3 and B2O3) can significantly improve the comprehensive properties of direct-current ZnO varistor ceramics. Al3+ improves the conductivity of the samples and reduces the residual voltage ratio of the samples; In3+ restricts the growth of grains through pinning effect and improves the voltage gradient of the samples; the doping of B3+ improves the surface state density of the sample, increases the barrier height and effectively suppresses the increase in leakage current. When the doping amount of B2O3 is 0.3%, the comprehensive performance of the sample is the best: the voltage gradient is 486 V/mm, the leakage current density is 0.58 μA/cm2, the nonlinear coefficient is 85, and the residual voltage ratio is 1.55.http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2020.001042surface state densitygrainconductivityresidual voltage ratio |
| spellingShingle | CHENG Kuan ZHAO Hongfeng ZHOU Yuanxiang Effect of multi-donor doping on structure and electrical properties of DC ZnO varistor ceramics Cailiao gongcheng surface state density grain conductivity residual voltage ratio |
| title | Effect of multi-donor doping on structure and electrical properties of DC ZnO varistor ceramics |
| title_full | Effect of multi-donor doping on structure and electrical properties of DC ZnO varistor ceramics |
| title_fullStr | Effect of multi-donor doping on structure and electrical properties of DC ZnO varistor ceramics |
| title_full_unstemmed | Effect of multi-donor doping on structure and electrical properties of DC ZnO varistor ceramics |
| title_short | Effect of multi-donor doping on structure and electrical properties of DC ZnO varistor ceramics |
| title_sort | effect of multi donor doping on structure and electrical properties of dc zno varistor ceramics |
| topic | surface state density grain conductivity residual voltage ratio |
| url | http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2020.001042 |
| work_keys_str_mv | AT chengkuan effectofmultidonordopingonstructureandelectricalpropertiesofdcznovaristorceramics AT zhaohongfeng effectofmultidonordopingonstructureandelectricalpropertiesofdcznovaristorceramics AT zhouyuanxiang effectofmultidonordopingonstructureandelectricalpropertiesofdcznovaristorceramics |