Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes
A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio (diameter 150 nm, length 20 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math&g...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-09-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/9/9/1260 |
| _version_ | 1831704666369425408 |
|---|---|
| author | Abhay Pratap Singh Kevin Roccapriore Zaina Algarni Riyadh Salloom Teresa D. Golden U. Philipose |
| author_facet | Abhay Pratap Singh Kevin Roccapriore Zaina Algarni Riyadh Salloom Teresa D. Golden U. Philipose |
| author_sort | Abhay Pratap Singh |
| collection | DOAJ |
| description | A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio (diameter 150 nm, length 20 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m) were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method. There are several reports on InSb nanowire growth in the pores of a mechanically rigid, nano-channel alumina template (NCA), where nanowire growth occurs in the pores of the NCA. This work on InSb nanowire growth in pores of track-etched polycarbonate (PC) membrane sheds light on the various factors that affect nucleation and nanowire growth. The average length and diameter of the as-grown nanowires was about 10 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m and 150 nm, respectively. Two possible mechanisms accounting for two different morphologies of the as-grown nanowires are proposed. The polycrystallinity observed in some of the nanowires is explained using the 3D ‘nucleation-coalescence’ mechanism. On the other hand, single crystal nanowires with a high density of twin defects and stacking faults grow epitaxially by a two-dimensional (2D) nucleation/growth mechanism. To assess the electrical quality of the nanowires, two- and four-terminal devices were fabricated using a single InSb nanowire contacted by two Ni electrodes. It was found that, at low bias, the ohmic current is controlled by charge diffusion from the bulk contacts. On the other hand, at high bias, the effects of space charge limited current (SCLC) are evident in the current−voltage behavior, characteristic of transport through structures with reduced electrostatic screening. A cross-over from ohmic to SCLC occurs at about 0.14 V, yielding a free carrier concentration of the order of <inline-formula> <math display="inline"> <semantics> <msup> <mn>10</mn> <mn>14</mn> </msup> </semantics> </math> </inline-formula> cm<inline-formula> <math display="inline"> <semantics> <msup> <mrow></mrow> <mrow> <mo>−</mo> <mn>3</mn> </mrow> </msup> </semantics> </math> </inline-formula>. |
| first_indexed | 2024-12-20T16:02:44Z |
| format | Article |
| id | doaj.art-35bdd6d0a495499295d7cfd861ea5845 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-20T16:02:44Z |
| publishDate | 2019-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-35bdd6d0a495499295d7cfd861ea58452022-12-21T19:34:12ZengMDPI AGNanomaterials2079-49912019-09-0199126010.3390/nano9091260nano9091260Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate MembranesAbhay Pratap Singh0Kevin Roccapriore1Zaina Algarni2Riyadh Salloom3Teresa D. Golden4U. Philipose5Department of Physics, University of North Texas, Denton, TX 76203, USADepartment of Physics, University of North Texas, Denton, TX 76203, USADepartment of Physics, University of North Texas, Denton, TX 76203, USADepartment of Materials Science and Engineering, University of North Texas, Denton, TX 76203, USADepartment of Chemistry, University of North Texas, Denton, TX 76203, USADepartment of Physics, University of North Texas, Denton, TX 76203, USAA dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio (diameter 150 nm, length 20 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m) were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method. There are several reports on InSb nanowire growth in the pores of a mechanically rigid, nano-channel alumina template (NCA), where nanowire growth occurs in the pores of the NCA. This work on InSb nanowire growth in pores of track-etched polycarbonate (PC) membrane sheds light on the various factors that affect nucleation and nanowire growth. The average length and diameter of the as-grown nanowires was about 10 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m and 150 nm, respectively. Two possible mechanisms accounting for two different morphologies of the as-grown nanowires are proposed. The polycrystallinity observed in some of the nanowires is explained using the 3D ‘nucleation-coalescence’ mechanism. On the other hand, single crystal nanowires with a high density of twin defects and stacking faults grow epitaxially by a two-dimensional (2D) nucleation/growth mechanism. To assess the electrical quality of the nanowires, two- and four-terminal devices were fabricated using a single InSb nanowire contacted by two Ni electrodes. It was found that, at low bias, the ohmic current is controlled by charge diffusion from the bulk contacts. On the other hand, at high bias, the effects of space charge limited current (SCLC) are evident in the current−voltage behavior, characteristic of transport through structures with reduced electrostatic screening. A cross-over from ohmic to SCLC occurs at about 0.14 V, yielding a free carrier concentration of the order of <inline-formula> <math display="inline"> <semantics> <msup> <mn>10</mn> <mn>14</mn> </msup> </semantics> </math> </inline-formula> cm<inline-formula> <math display="inline"> <semantics> <msup> <mrow></mrow> <mrow> <mo>−</mo> <mn>3</mn> </mrow> </msup> </semantics> </math> </inline-formula>.https://www.mdpi.com/2079-4991/9/9/1260polycrytaline InSb nanowireelectrochemical depositionspace charge limited current (SCLC)polycorbonate template |
| spellingShingle | Abhay Pratap Singh Kevin Roccapriore Zaina Algarni Riyadh Salloom Teresa D. Golden U. Philipose Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes Nanomaterials polycrytaline InSb nanowire electrochemical deposition space charge limited current (SCLC) polycorbonate template |
| title | Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes |
| title_full | Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes |
| title_fullStr | Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes |
| title_full_unstemmed | Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes |
| title_short | Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes |
| title_sort | structure and electronic properties of insb nanowires grown in flexible polycarbonate membranes |
| topic | polycrytaline InSb nanowire electrochemical deposition space charge limited current (SCLC) polycorbonate template |
| url | https://www.mdpi.com/2079-4991/9/9/1260 |
| work_keys_str_mv | AT abhaypratapsingh structureandelectronicpropertiesofinsbnanowiresgrowninflexiblepolycarbonatemembranes AT kevinroccapriore structureandelectronicpropertiesofinsbnanowiresgrowninflexiblepolycarbonatemembranes AT zainaalgarni structureandelectronicpropertiesofinsbnanowiresgrowninflexiblepolycarbonatemembranes AT riyadhsalloom structureandelectronicpropertiesofinsbnanowiresgrowninflexiblepolycarbonatemembranes AT teresadgolden structureandelectronicpropertiesofinsbnanowiresgrowninflexiblepolycarbonatemembranes AT uphilipose structureandelectronicpropertiesofinsbnanowiresgrowninflexiblepolycarbonatemembranes |