Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation
The toxic lead component as well as the expensive and less stable spiro-OMeTAD in perovskite solar cells (PSCs) pose a great deal of hindrance to their commercial viability. Herein, a computational approach towards modeling and simulation of all inorganic cesium tin-germanium triiodide (CsSnGeI3) ba...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2022-12-01
|
| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/20949 |
| Summary: | The toxic lead component as well as the expensive and less stable spiro-OMeTAD in perovskite solar cells (PSCs) pose a great deal of hindrance to their commercial viability. Herein, a computational approach towards modeling and simulation of all inorganic cesium tin-germanium triiodide (CsSnGeI3) based perovskite solar cell was proposed and implemented using solar cell capacitance simulator (SCAPS–1D) tool. Aluminium doped zinc oxide (ZnO:Al) and Copper Iodide (CuI) were used as electron and hole transport layers (ETL and HTL) respectively. The initial device without any optimization gave a power conversion efficiency (PCE) of 24.826%, fill factor (FF) of 86.336%, short circuit current density (Jsc) of 26.174 mA/cm2 and open circuit voltage (Voc) of 1.099 V. On varying the aforementioned parameters individually while keeping others constant, the optimal values are 1000 nm for absorber thickness, 1014 cm-3 for absorber layer defect density, 50 nm for ETL thickness, 1017 cm-3 for ETL doping concentration and 260 K for temperature. Simulating with these optimized values results to PCE of 25.459%, Voc of 1.145 V, Jsc of 25.241 mA/cm2, and a FF of 88.060%. These results indicate that the CsSnGeI3 is a viable alternative absorbing layer for usage in the design of a high PCE perovskite solar cell device. |
|---|---|
| ISSN: | 2312-4334 2312-4539 |