Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation
The toxic lead component as well as the expensive and less stable spiro-OMeTAD in perovskite solar cells (PSCs) pose a great deal of hindrance to their commercial viability. Herein, a computational approach towards modeling and simulation of all inorganic cesium tin-germanium triiodide (CsSnGeI3) ba...
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| Format: | Article |
| Language: | English |
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V.N. Karazin Kharkiv National University Publishing
2022-12-01
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| Series: | East European Journal of Physics |
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| Online Access: | https://periodicals.karazin.ua/eejp/article/view/20949 |
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| author | Muhammed O. Abdulmalik Eli Danladi Rita C. Obasi Philibus M. Gyuk Francis U. Salifu Suleiman Magaji Anselem C. Egbugha Daniel Thomas |
| author_facet | Muhammed O. Abdulmalik Eli Danladi Rita C. Obasi Philibus M. Gyuk Francis U. Salifu Suleiman Magaji Anselem C. Egbugha Daniel Thomas |
| author_sort | Muhammed O. Abdulmalik |
| collection | DOAJ |
| description | The toxic lead component as well as the expensive and less stable spiro-OMeTAD in perovskite solar cells (PSCs) pose a great deal of hindrance to their commercial viability. Herein, a computational approach towards modeling and simulation of all inorganic cesium tin-germanium triiodide (CsSnGeI3) based perovskite solar cell was proposed and implemented using solar cell capacitance simulator (SCAPS–1D) tool. Aluminium doped zinc oxide (ZnO:Al) and Copper Iodide (CuI) were used as electron and hole transport layers (ETL and HTL) respectively. The initial device without any optimization gave a power conversion efficiency (PCE) of 24.826%, fill factor (FF) of 86.336%, short circuit current density (Jsc) of 26.174 mA/cm2 and open circuit voltage (Voc) of 1.099 V. On varying the aforementioned parameters individually while keeping others constant, the optimal values are 1000 nm for absorber thickness, 1014 cm-3 for absorber layer defect density, 50 nm for ETL thickness, 1017 cm-3 for ETL doping concentration and 260 K for temperature. Simulating with these optimized values results to PCE of 25.459%, Voc of 1.145 V, Jsc of 25.241 mA/cm2, and a FF of 88.060%. These results indicate that the CsSnGeI3 is a viable alternative absorbing layer for usage in the design of a high PCE perovskite solar cell device. |
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| id | doaj.art-35ff952bfa5b41c4bdf00af362f6434a |
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| issn | 2312-4334 2312-4539 |
| language | English |
| last_indexed | 2024-04-09T15:49:23Z |
| publishDate | 2022-12-01 |
| publisher | V.N. Karazin Kharkiv National University Publishing |
| record_format | Article |
| series | East European Journal of Physics |
| spelling | doaj.art-35ff952bfa5b41c4bdf00af362f6434a2023-04-26T11:52:06ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392022-12-01412513510.26565/2312-4334-2022-4-1220949Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device SimulationMuhammed O. Abdulmalik0Eli Danladi1Rita C. Obasi2Philibus M. Gyuk3Francis U. Salifu4Suleiman Magaji5Anselem C. Egbugha6Daniel Thomas7Department of Physics, Confluence University of Science and Technology, Osara, Kogi State, NigeriaDepartment of Physics, Federal University of Health Sciences, Otukpo, Benue State, NigeriCentre for Satellite Technology Development-NASRDA, Abuja, NigeriaDepartment of Physics, Kaduna State University, Kaduna, NigeriaDepartment of Physics, Confluence University of Science and Technology, Osara, Kogi State, NigeriaDepartment of Electronics and Communications Engineering, Nigerian Defence Academy, Kaduna, NigeriaOperations Unit, Starsight Energy, NigeriaDepartment of Physics, Kaduna State University, Kaduna, NigeriaThe toxic lead component as well as the expensive and less stable spiro-OMeTAD in perovskite solar cells (PSCs) pose a great deal of hindrance to their commercial viability. Herein, a computational approach towards modeling and simulation of all inorganic cesium tin-germanium triiodide (CsSnGeI3) based perovskite solar cell was proposed and implemented using solar cell capacitance simulator (SCAPS–1D) tool. Aluminium doped zinc oxide (ZnO:Al) and Copper Iodide (CuI) were used as electron and hole transport layers (ETL and HTL) respectively. The initial device without any optimization gave a power conversion efficiency (PCE) of 24.826%, fill factor (FF) of 86.336%, short circuit current density (Jsc) of 26.174 mA/cm2 and open circuit voltage (Voc) of 1.099 V. On varying the aforementioned parameters individually while keeping others constant, the optimal values are 1000 nm for absorber thickness, 1014 cm-3 for absorber layer defect density, 50 nm for ETL thickness, 1017 cm-3 for ETL doping concentration and 260 K for temperature. Simulating with these optimized values results to PCE of 25.459%, Voc of 1.145 V, Jsc of 25.241 mA/cm2, and a FF of 88.060%. These results indicate that the CsSnGeI3 is a viable alternative absorbing layer for usage in the design of a high PCE perovskite solar cell device.https://periodicals.karazin.ua/eejp/article/view/20949perovskite solar cellsscaps–1dcssngei3hole transport materialelectron transport material |
| spellingShingle | Muhammed O. Abdulmalik Eli Danladi Rita C. Obasi Philibus M. Gyuk Francis U. Salifu Suleiman Magaji Anselem C. Egbugha Daniel Thomas Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation East European Journal of Physics perovskite solar cells scaps–1d cssngei3 hole transport material electron transport material |
| title | Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation |
| title_full | Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation |
| title_fullStr | Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation |
| title_full_unstemmed | Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation |
| title_short | Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation |
| title_sort | numerical study of 25 459 alloyed inorganic lead free perovskite cssngei3 based solar cell by device simulation |
| topic | perovskite solar cells scaps–1d cssngei3 hole transport material electron transport material |
| url | https://periodicals.karazin.ua/eejp/article/view/20949 |
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