| Summary: | Silicon carbide, a third-generation semiconductor material, is widely used in the creation of high-power devices. In this article, we systematically study the influence of three crucial parameters on the polishing rate of a silicon carbide surface using orthogonal experiments. By optimizing the parameters of chemical mechanical polishing (CMP) through experiments, we determined that the material removal rate (MRR) is 1.2 μm/h and the surface roughness (Ra) is 0.093 nm. Analysis of the relevant polishing mechanism revealed that manganese dioxide formed during the polishing process. Finally, due to the electrostatic effect of the two, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>M</mi><mi>n</mi><msub><mi>O</mi><mn>2</mn></msub></mrow></semantics></math></inline-formula> adsorbed on the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>A</mi><msub><mi>l</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>, which explains the polishing mechanism of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>A</mi><msub><mi>l</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula> in the slurry.
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