Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) Abrasive
Silicon carbide, a third-generation semiconductor material, is widely used in the creation of high-power devices. In this article, we systematically study the influence of three crucial parameters on the polishing rate of a silicon carbide surface using orthogonal experiments. By optimizing the para...
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MDPI AG
2024-01-01
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| Online Access: | https://www.mdpi.com/1996-1944/17/3/679 |
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| author | Juntao Gong Weilei Wang Weili Liu Zhitang Song |
| author_facet | Juntao Gong Weilei Wang Weili Liu Zhitang Song |
| author_sort | Juntao Gong |
| collection | DOAJ |
| description | Silicon carbide, a third-generation semiconductor material, is widely used in the creation of high-power devices. In this article, we systematically study the influence of three crucial parameters on the polishing rate of a silicon carbide surface using orthogonal experiments. By optimizing the parameters of chemical mechanical polishing (CMP) through experiments, we determined that the material removal rate (MRR) is 1.2 μm/h and the surface roughness (Ra) is 0.093 nm. Analysis of the relevant polishing mechanism revealed that manganese dioxide formed during the polishing process. Finally, due to the electrostatic effect of the two, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>M</mi><mi>n</mi><msub><mi>O</mi><mn>2</mn></msub></mrow></semantics></math></inline-formula> adsorbed on the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>A</mi><msub><mi>l</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>, which explains the polishing mechanism of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>A</mi><msub><mi>l</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula> in the slurry. |
| first_indexed | 2024-03-08T03:52:31Z |
| format | Article |
| id | doaj.art-3601f74fafa34c62a11550e2e6978cbe |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-08T03:52:31Z |
| publishDate | 2024-01-01 |
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| series | Materials |
| spelling | doaj.art-3601f74fafa34c62a11550e2e6978cbe2024-02-09T15:17:42ZengMDPI AGMaterials1996-19442024-01-0117367910.3390/ma17030679Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) AbrasiveJuntao Gong0Weilei Wang1Weili Liu2Zhitang Song3National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, ChinaShanghai Xinanna Electronic Technology Co., Ltd., Shanghai 201506, ChinaNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, ChinaNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, ChinaSilicon carbide, a third-generation semiconductor material, is widely used in the creation of high-power devices. In this article, we systematically study the influence of three crucial parameters on the polishing rate of a silicon carbide surface using orthogonal experiments. By optimizing the parameters of chemical mechanical polishing (CMP) through experiments, we determined that the material removal rate (MRR) is 1.2 μm/h and the surface roughness (Ra) is 0.093 nm. Analysis of the relevant polishing mechanism revealed that manganese dioxide formed during the polishing process. Finally, due to the electrostatic effect of the two, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>M</mi><mi>n</mi><msub><mi>O</mi><mn>2</mn></msub></mrow></semantics></math></inline-formula> adsorbed on the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>A</mi><msub><mi>l</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>, which explains the polishing mechanism of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>A</mi><msub><mi>l</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula> in the slurry.https://www.mdpi.com/1996-1944/17/3/679SiCCMPaluminapolishing mechanism |
| spellingShingle | Juntao Gong Weilei Wang Weili Liu Zhitang Song Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) Abrasive Materials SiC CMP alumina polishing mechanism |
| title | Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) Abrasive |
| title_full | Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) Abrasive |
| title_fullStr | Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) Abrasive |
| title_full_unstemmed | Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) Abrasive |
| title_short | Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) Abrasive |
| title_sort | polishing mechanism of cmp 4h sic crystal substrate 0001 si surface based on an alumina i al i sub 2 sub i o i sub 3 sub abrasive |
| topic | SiC CMP alumina polishing mechanism |
| url | https://www.mdpi.com/1996-1944/17/3/679 |
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