Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) Abrasive

Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) Abrasive

Silicon carbide, a third-generation semiconductor material, is widely used in the creation of high-power devices. In this article, we systematically study the influence of three crucial parameters on the polishing rate of a silicon carbide surface using orthogonal experiments. By optimizing the para...

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Bibliographic Details
Main Authors: Juntao Gong, Weilei Wang, Weili Liu, Zhitang Song
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Materials
Subjects:
SiC
CMP
alumina
polishing mechanism
Online Access:https://www.mdpi.com/1996-1944/17/3/679

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