Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes
To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), str...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4948511 |
| _version_ | 1819277420513984512 |
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| author | Yang Huang Zhiqiang Liu Xiaoyan Yi Yao Guo Shaoteng Wu Guodong Yuan JunXi Wang Guohong Wang Jinmin Li |
| author_facet | Yang Huang Zhiqiang Liu Xiaoyan Yi Yao Guo Shaoteng Wu Guodong Yuan JunXi Wang Guohong Wang Jinmin Li |
| author_sort | Yang Huang |
| collection | DOAJ |
| description | To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), structure of multiple quantum wells (MQWs), polarization field, and temperature are explored. The simulated results based on this model shed light on previously reported experimental observations and provide basic criteria for suppressing electron leakage, advancing the design of InGaN/GaN LEDs. |
| first_indexed | 2024-12-23T23:55:50Z |
| format | Article |
| id | doaj.art-36236fc4233c4a2a81da6e081abcfed4 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-23T23:55:50Z |
| publishDate | 2016-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-36236fc4233c4a2a81da6e081abcfed42022-12-21T17:25:16ZengAIP Publishing LLCAIP Advances2158-32262016-04-0164045219045219-910.1063/1.4948511078604ADVOvershoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodesYang Huang0Zhiqiang Liu1Xiaoyan Yi2Yao Guo3Shaoteng Wu4Guodong Yuan5JunXi Wang6Guohong Wang7Jinmin Li8R&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaTo evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), structure of multiple quantum wells (MQWs), polarization field, and temperature are explored. The simulated results based on this model shed light on previously reported experimental observations and provide basic criteria for suppressing electron leakage, advancing the design of InGaN/GaN LEDs.http://dx.doi.org/10.1063/1.4948511 |
| spellingShingle | Yang Huang Zhiqiang Liu Xiaoyan Yi Yao Guo Shaoteng Wu Guodong Yuan JunXi Wang Guohong Wang Jinmin Li Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes AIP Advances |
| title | Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes |
| title_full | Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes |
| title_fullStr | Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes |
| title_full_unstemmed | Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes |
| title_short | Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes |
| title_sort | overshoot effects of electron on efficiency droop in ingan gan mqw light emitting diodes |
| url | http://dx.doi.org/10.1063/1.4948511 |
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