Realizing Plain Optimization of the Thermoelectric Properties in BiCuSeO Oxide via Self-Substitution-Induced Lattice Dislocations
Seeking new strategies to tune the intrinsic defect and optimize the thermoelectric performance via no or less use of external doped elements (i.e., plain optimization) is an important method to realize the sustainable development of thermoelectric materials. Meanwhile, creating dislocation defects...
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Association for the Advancement of Science (AAAS)
2023-01-01
|
| Series: | Research |
| Online Access: | https://spj.science.org/doi/10.34133/research.0123 |
| _version_ | 1797225542025478144 |
|---|---|
| author | Rui Xu Zhiwei Chen Qizhu Li Xiaoyu Yang Han Wan Mengruizhe Kong Wei Bai Nengyuan Zhu Ruohan Wang Jiming Song Zhou Li Chong Xiao Binghui Ge |
| author_facet | Rui Xu Zhiwei Chen Qizhu Li Xiaoyu Yang Han Wan Mengruizhe Kong Wei Bai Nengyuan Zhu Ruohan Wang Jiming Song Zhou Li Chong Xiao Binghui Ge |
| author_sort | Rui Xu |
| collection | DOAJ |
| description | Seeking new strategies to tune the intrinsic defect and optimize the thermoelectric performance via no or less use of external doped elements (i.e., plain optimization) is an important method to realize the sustainable development of thermoelectric materials. Meanwhile, creating dislocation defects in oxide systems is quite challenging because the rigid and stiff ionic/covalent bonds can hardly tolerate the large strain energy associated with dislocations. Herein, taking BiCuSeO oxide as an example, the present work reports a successful construction of dense lattice dislocations in BiCuSeO by self-doping of Se at the O site (i.e., SeO self-substitution), and achieves plain optimization of the thermoelectric properties with only external Pb doping. Owing to the self-substitution-induced large lattice distortion and the potential reinforcement effect by Pb doping, high-density (about 3.0 × 1014 m−2) dislocations form in the grains, which enhances the scattering strength of mid-frequency phonon and results in a substantial low lattice thermal conductivity of 0.38 W m−1 K−1 at 823 K in Pb-doped BiCuSeO. Meanwhile, PbBi doping and Cu vacancy markedly improve the electrical conductivity while maintaining a competitively high Seebeck coefficient, thereby contributing to a highest power factor of 942 μW m−1 K−2. Finally, a remarkably enhanced zT value of 1.32 is obtained at 823 K in Bi0.94Pb0.06Cu0.97Se1.05O0.95 with almost compositional plainification. The high-density dislocation structure reported in this work will also provide a good inspiration for the design and construction of dislocations in other oxide systems. |
| first_indexed | 2024-04-24T14:10:40Z |
| format | Article |
| id | doaj.art-3648f4c53ff84cbe96781e7d9f1306c3 |
| institution | Directory Open Access Journal |
| issn | 2639-5274 |
| language | English |
| last_indexed | 2024-04-24T14:10:40Z |
| publishDate | 2023-01-01 |
| publisher | American Association for the Advancement of Science (AAAS) |
| record_format | Article |
| series | Research |
| spelling | doaj.art-3648f4c53ff84cbe96781e7d9f1306c32024-04-03T09:21:53ZengAmerican Association for the Advancement of Science (AAAS)Research2639-52742023-01-01610.34133/research.0123Realizing Plain Optimization of the Thermoelectric Properties in BiCuSeO Oxide via Self-Substitution-Induced Lattice DislocationsRui Xu0Zhiwei Chen1Qizhu Li2Xiaoyu Yang3Han Wan4Mengruizhe Kong5Wei Bai6Nengyuan Zhu7Ruohan Wang8Jiming Song9Zhou Li10Chong Xiao11Binghui Ge12Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology and School of Materials Science and Engineering, Anhui University, Hefei 230601, China.School of Materials Science and Engineering, Tongji University, Shanghai 201804, China.Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology and School of Materials Science and Engineering, Anhui University, Hefei 230601, China.Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology and School of Materials Science and Engineering, Anhui University, Hefei 230601, China.Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology and School of Materials Science and Engineering, Anhui University, Hefei 230601, China.Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei 230026, China.Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei 230026, China.Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology and School of Materials Science and Engineering, Anhui University, Hefei 230601, China.Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology and School of Materials Science and Engineering, Anhui University, Hefei 230601, China.Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology and School of Materials Science and Engineering, Anhui University, Hefei 230601, China.Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology and School of Materials Science and Engineering, Anhui University, Hefei 230601, China.Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230031, China.Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology and School of Materials Science and Engineering, Anhui University, Hefei 230601, China.Seeking new strategies to tune the intrinsic defect and optimize the thermoelectric performance via no or less use of external doped elements (i.e., plain optimization) is an important method to realize the sustainable development of thermoelectric materials. Meanwhile, creating dislocation defects in oxide systems is quite challenging because the rigid and stiff ionic/covalent bonds can hardly tolerate the large strain energy associated with dislocations. Herein, taking BiCuSeO oxide as an example, the present work reports a successful construction of dense lattice dislocations in BiCuSeO by self-doping of Se at the O site (i.e., SeO self-substitution), and achieves plain optimization of the thermoelectric properties with only external Pb doping. Owing to the self-substitution-induced large lattice distortion and the potential reinforcement effect by Pb doping, high-density (about 3.0 × 1014 m−2) dislocations form in the grains, which enhances the scattering strength of mid-frequency phonon and results in a substantial low lattice thermal conductivity of 0.38 W m−1 K−1 at 823 K in Pb-doped BiCuSeO. Meanwhile, PbBi doping and Cu vacancy markedly improve the electrical conductivity while maintaining a competitively high Seebeck coefficient, thereby contributing to a highest power factor of 942 μW m−1 K−2. Finally, a remarkably enhanced zT value of 1.32 is obtained at 823 K in Bi0.94Pb0.06Cu0.97Se1.05O0.95 with almost compositional plainification. The high-density dislocation structure reported in this work will also provide a good inspiration for the design and construction of dislocations in other oxide systems.https://spj.science.org/doi/10.34133/research.0123 |
| spellingShingle | Rui Xu Zhiwei Chen Qizhu Li Xiaoyu Yang Han Wan Mengruizhe Kong Wei Bai Nengyuan Zhu Ruohan Wang Jiming Song Zhou Li Chong Xiao Binghui Ge Realizing Plain Optimization of the Thermoelectric Properties in BiCuSeO Oxide via Self-Substitution-Induced Lattice Dislocations Research |
| title | Realizing Plain Optimization of the Thermoelectric Properties in BiCuSeO Oxide via Self-Substitution-Induced Lattice Dislocations |
| title_full | Realizing Plain Optimization of the Thermoelectric Properties in BiCuSeO Oxide via Self-Substitution-Induced Lattice Dislocations |
| title_fullStr | Realizing Plain Optimization of the Thermoelectric Properties in BiCuSeO Oxide via Self-Substitution-Induced Lattice Dislocations |
| title_full_unstemmed | Realizing Plain Optimization of the Thermoelectric Properties in BiCuSeO Oxide via Self-Substitution-Induced Lattice Dislocations |
| title_short | Realizing Plain Optimization of the Thermoelectric Properties in BiCuSeO Oxide via Self-Substitution-Induced Lattice Dislocations |
| title_sort | realizing plain optimization of the thermoelectric properties in bicuseo oxide via self substitution induced lattice dislocations |
| url | https://spj.science.org/doi/10.34133/research.0123 |
| work_keys_str_mv | AT ruixu realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT zhiweichen realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT qizhuli realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT xiaoyuyang realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT hanwan realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT mengruizhekong realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT weibai realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT nengyuanzhu realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT ruohanwang realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT jimingsong realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT zhouli realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT chongxiao realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations AT binghuige realizingplainoptimizationofthethermoelectricpropertiesinbicuseooxideviaselfsubstitutioninducedlatticedislocations |