Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties
To date, it has remained challenging to achieve N-polar AlN, which is of great importance for high power, high frequency, and high temperature electronics, acoustic resonators and filters, ultraviolet (UV) optoelectronics, and integrated photonics. Here, we performed a detailed study of the molecula...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0168970 |
| _version_ | 1797367001443729408 |
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| author | Mingtao Hu Ping Wang Ding Wang Yuanpeng Wu Shubham Mondal Danhao Wang Elaheh Ahmadi Tao Ma Zetian Mi |
| author_facet | Mingtao Hu Ping Wang Ding Wang Yuanpeng Wu Shubham Mondal Danhao Wang Elaheh Ahmadi Tao Ma Zetian Mi |
| author_sort | Mingtao Hu |
| collection | DOAJ |
| description | To date, it has remained challenging to achieve N-polar AlN, which is of great importance for high power, high frequency, and high temperature electronics, acoustic resonators and filters, ultraviolet (UV) optoelectronics, and integrated photonics. Here, we performed a detailed study of the molecular beam epitaxy and characterization of N-polar AlN on C-face 4H-SiC substrates. The N-polar AlN films grown under optimized conditions exhibit an atomically smooth surface and strong excitonic emission in the deep UV with luminescence efficiency exceeding 50% at room temperature. Detailed scanning transmission electron microscopy (STEM) studies suggest that most dislocations are terminated/annihilated within ∼200 nm AlN grown directly on the SiC substrate due to the relatively small (1%) lattice mismatch between AlN and SiC. The strain distribution of AlN is further analyzed by STEM and micro-Raman spectroscopy, and its impact on the temperature-dependent deep UV emission is elucidated. |
| first_indexed | 2024-03-08T17:11:38Z |
| format | Article |
| id | doaj.art-368b2ca3eba3408889ebccff65d51fec |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-03-08T17:11:38Z |
| publishDate | 2023-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-368b2ca3eba3408889ebccff65d51fec2024-01-03T19:56:07ZengAIP Publishing LLCAPL Materials2166-532X2023-12-011112121111121111-710.1063/5.0168970Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical propertiesMingtao Hu0Ping Wang1Ding Wang2Yuanpeng Wu3Shubham Mondal4Danhao Wang5Elaheh Ahmadi6Tao Ma7Zetian Mi8Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USAMichigan Center for Materials Characterization, University of Michigan, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USATo date, it has remained challenging to achieve N-polar AlN, which is of great importance for high power, high frequency, and high temperature electronics, acoustic resonators and filters, ultraviolet (UV) optoelectronics, and integrated photonics. Here, we performed a detailed study of the molecular beam epitaxy and characterization of N-polar AlN on C-face 4H-SiC substrates. The N-polar AlN films grown under optimized conditions exhibit an atomically smooth surface and strong excitonic emission in the deep UV with luminescence efficiency exceeding 50% at room temperature. Detailed scanning transmission electron microscopy (STEM) studies suggest that most dislocations are terminated/annihilated within ∼200 nm AlN grown directly on the SiC substrate due to the relatively small (1%) lattice mismatch between AlN and SiC. The strain distribution of AlN is further analyzed by STEM and micro-Raman spectroscopy, and its impact on the temperature-dependent deep UV emission is elucidated.http://dx.doi.org/10.1063/5.0168970 |
| spellingShingle | Mingtao Hu Ping Wang Ding Wang Yuanpeng Wu Shubham Mondal Danhao Wang Elaheh Ahmadi Tao Ma Zetian Mi Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties APL Materials |
| title | Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties |
| title_full | Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties |
| title_fullStr | Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties |
| title_full_unstemmed | Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties |
| title_short | Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties |
| title_sort | heteroepitaxy of n polar aln on c face 4h sic structural and optical properties |
| url | http://dx.doi.org/10.1063/5.0168970 |
| work_keys_str_mv | AT mingtaohu heteroepitaxyofnpolaralnoncface4hsicstructuralandopticalproperties AT pingwang heteroepitaxyofnpolaralnoncface4hsicstructuralandopticalproperties AT dingwang heteroepitaxyofnpolaralnoncface4hsicstructuralandopticalproperties AT yuanpengwu heteroepitaxyofnpolaralnoncface4hsicstructuralandopticalproperties AT shubhammondal heteroepitaxyofnpolaralnoncface4hsicstructuralandopticalproperties AT danhaowang heteroepitaxyofnpolaralnoncface4hsicstructuralandopticalproperties AT elahehahmadi heteroepitaxyofnpolaralnoncface4hsicstructuralandopticalproperties AT taoma heteroepitaxyofnpolaralnoncface4hsicstructuralandopticalproperties AT zetianmi heteroepitaxyofnpolaralnoncface4hsicstructuralandopticalproperties |