Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties
To date, it has remained challenging to achieve N-polar AlN, which is of great importance for high power, high frequency, and high temperature electronics, acoustic resonators and filters, ultraviolet (UV) optoelectronics, and integrated photonics. Here, we performed a detailed study of the molecula...
Main Authors: | Mingtao Hu, Ping Wang, Ding Wang, Yuanpeng Wu, Shubham Mondal, Danhao Wang, Elaheh Ahmadi, Tao Ma, Zetian Mi |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2023-12-01
|
Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0168970 |
Similar Items
-
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
by: Lemettinen, Jori, et al.
Published: (2019) -
Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor
by: Fengwen Mu, et al.
Published: (2019-09-01) -
Theoretical Analysis of SAW Propagation in 3C-SiC/c-AlN
by: Cinzia Caliendo
Published: (2016-03-01) -
MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
by: Lemettinen, Jori, et al.
Published: (2019) -
Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC
by: Dong-Hyeon Kim, et al.
Published: (2021-03-01)