Molecular dynamics simulation of displacement cascades in cubic silicon carbide
We use molecular dynamics (MD) methods to study collision cascades in cubic silicon carbide (3C-SiC), which is a candidate for various applications in nuclear industries. One Tersoff potential, which can reproduce the thermal and elastic properties of 3C-SiC, was firstly connected with ZBL potential...
Main Authors: | Qin Ran, Yi Zhou, Yu Zou, Jun Wang, Zhengang Duan, Zhipeng Sun, Baoqin Fu, Shixin Gao |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2021-06-01
|
Series: | Nuclear Materials and Energy |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2352179121000454 |
Similar Items
-
New Approaches and Understandings in the Growth of Cubic Silicon Carbide
by: Francesco La Via, et al.
Published: (2021-09-01) -
Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide
by: Mohammad Beygi, et al.
Published: (2019-06-01) -
Manufacturing technology for contacts to silicon carbide
by: Kudryk Ya.Ya., et al.
Published: (2013-02-01) -
Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology
by: Fan Li, et al.
Published: (2021-10-01) -
Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors
by: Gyeongyeop Lee, et al.
Published: (2022-06-01)