Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface
Using first-principles methods, we generate an amorphous SiO2/4H-SiC interface with a transition layer. Based this interface model, we investigate the structural and electronic properties of the interfacial transition layer. The calculated Si 2p core-level shifts for this interface are comparable to...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4906257 |