Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor
Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femto...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/5/789 |
| _version_ | 1827752366330347520 |
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| author | Yongchao Yu Pooran Joshi Denzel Bridges David Fieser Anming Hu |
| author_facet | Yongchao Yu Pooran Joshi Denzel Bridges David Fieser Anming Hu |
| author_sort | Yongchao Yu |
| collection | DOAJ |
| description | Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias. |
| first_indexed | 2024-03-11T07:15:22Z |
| format | Article |
| id | doaj.art-36a4625be83f4c449c236ee11920b22f |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T07:15:22Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-36a4625be83f4c449c236ee11920b22f2023-11-17T08:16:28ZengMDPI AGNanomaterials2079-49912023-02-0113578910.3390/nano13050789Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube MemristorYongchao Yu0Pooran Joshi1Denzel Bridges2David Fieser3Anming Hu4Department of Mechanical, Aerospace and Biomedical Engineering, University of Tennessee Knoxville, 1512 Middle Drive, Knoxville, TN 37996, USAOak Ridge National Lab, 1 Bethel Valley Rd., Oak Ridge, TN 37831, USADepartment of Mechanical, Aerospace and Biomedical Engineering, University of Tennessee Knoxville, 1512 Middle Drive, Knoxville, TN 37996, USADepartment of Mechanical, Aerospace and Biomedical Engineering, University of Tennessee Knoxville, 1512 Middle Drive, Knoxville, TN 37996, USADepartment of Mechanical, Aerospace and Biomedical Engineering, University of Tennessee Knoxville, 1512 Middle Drive, Knoxville, TN 37996, USANanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias.https://www.mdpi.com/2079-4991/13/5/789memristortellurium nanotubelaser joiningnano-joining |
| spellingShingle | Yongchao Yu Pooran Joshi Denzel Bridges David Fieser Anming Hu Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor Nanomaterials memristor tellurium nanotube laser joining nano-joining |
| title | Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor |
| title_full | Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor |
| title_fullStr | Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor |
| title_full_unstemmed | Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor |
| title_short | Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor |
| title_sort | femtosecond laser induced nano joining of volatile tellurium nanotube memristor |
| topic | memristor tellurium nanotube laser joining nano-joining |
| url | https://www.mdpi.com/2079-4991/13/5/789 |
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