Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor

Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor

Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femto...

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Bibliographic Details
Main Authors:	Yongchao Yu, Pooran Joshi, Denzel Bridges, David Fieser, Anming Hu
Format:	Article
Language:	English
Published:	MDPI AG 2023-02-01
Series:	Nanomaterials
Subjects:	memristor tellurium nanotube laser joining nano-joining
Online Access:	https://www.mdpi.com/2079-4991/13/5/789

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