Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation
The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixe...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2015-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4922267 |
| _version_ | 1819120507501412352 |
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| author | Neha Batra Jhuma Gope Vandana Jagannath Panigrahi Rajbir Singh P. K. Singh |
| author_facet | Neha Batra Jhuma Gope Vandana Jagannath Panigrahi Rajbir Singh P. K. Singh |
| author_sort | Neha Batra |
| collection | DOAJ |
| description | The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, QF. The interface defect density (Dit) decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min). |
| first_indexed | 2024-12-22T06:21:46Z |
| format | Article |
| id | doaj.art-36a4cdcd21294f00acd39010f511c127 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-22T06:21:46Z |
| publishDate | 2015-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-36a4cdcd21294f00acd39010f511c1272022-12-21T18:35:57ZengAIP Publishing LLCAIP Advances2158-32262015-06-0156067113067113-1010.1063/1.4922267012506ADVInfluence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivationNeha Batra0Jhuma Gope1Vandana2Jagannath Panigrahi3Rajbir Singh4P. K. Singh5Academy of Scientific & Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, New Delhi-110012, IndiaSilicon Solar Cell Group (Network of Institutes for Solar Energy) CSIR-NPL, New Delhi-110012, IndiaSilicon Solar Cell Group (Network of Institutes for Solar Energy) CSIR-NPL, New Delhi-110012, IndiaAcademy of Scientific & Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, New Delhi-110012, IndiaAcademy of Scientific & Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, New Delhi-110012, IndiaAcademy of Scientific & Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, New Delhi-110012, IndiaThe effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, QF. The interface defect density (Dit) decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min).http://dx.doi.org/10.1063/1.4922267 |
| spellingShingle | Neha Batra Jhuma Gope Vandana Jagannath Panigrahi Rajbir Singh P. K. Singh Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation AIP Advances |
| title | Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation |
| title_full | Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation |
| title_fullStr | Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation |
| title_full_unstemmed | Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation |
| title_short | Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation |
| title_sort | influence of deposition temperature of thermal ald deposited al2o3 films on silicon surface passivation |
| url | http://dx.doi.org/10.1063/1.4922267 |
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