Spatially resolved dark count rate of SiPMs
Abstract In this work we present a novel method for the spatially resolved characterization of crystal defects in SiPMs. The contribution of crystal defects to the DCR is evaluated by exploiting the effect of “hot carrier luminescence” (HCL), which is light that is emitted during the Geiger mode ope...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2018-11-01
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| Series: | European Physical Journal C: Particles and Fields |
| Online Access: | http://link.springer.com/article/10.1140/epjc/s10052-018-6454-0 |
| _version_ | 1818523878768508928 |
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| author | E. Engelmann E. Popova S. Vinogradov |
| author_facet | E. Engelmann E. Popova S. Vinogradov |
| author_sort | E. Engelmann |
| collection | DOAJ |
| description | Abstract In this work we present a novel method for the spatially resolved characterization of crystal defects in SiPMs. The contribution of crystal defects to the DCR is evaluated by exploiting the effect of “hot carrier luminescence” (HCL), which is light that is emitted during the Geiger mode operation of avalanche photodiodes (SiPM micro-cells). Spatially confined regions with an enhanced light emission intensity (hotspots) are identified within the active areas of SiPM micro-cells. By correlating the detected light intensity and the DCR, a significant contribution of up to 56% of the DCR can be attributed to less than 5% of the micro-cells. The analysis of the temperature dependence of the emitted light identifies the Shockley-Read-Hall-Generation to be the dominant mechanism responsible for the occurrence of hotspots. The motivation of this work is to generate a deeper understanding of the origin of hotspots in order to suppress their contribution to the DCR of SiPMs. |
| first_indexed | 2024-12-11T05:50:11Z |
| format | Article |
| id | doaj.art-36bb8eacb89a4192b887f4847da6d3ed |
| institution | Directory Open Access Journal |
| issn | 1434-6044 1434-6052 |
| language | English |
| last_indexed | 2024-12-11T05:50:11Z |
| publishDate | 2018-11-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | European Physical Journal C: Particles and Fields |
| spelling | doaj.art-36bb8eacb89a4192b887f4847da6d3ed2022-12-22T01:18:50ZengSpringerOpenEuropean Physical Journal C: Particles and Fields1434-60441434-60522018-11-0178111810.1140/epjc/s10052-018-6454-0Spatially resolved dark count rate of SiPMsE. Engelmann0E. Popova1S. Vinogradov2Institute of Physics, Universität der Bundeswehr MünchenNational Research Nuclear University MEPhINational Research Nuclear University MEPhIAbstract In this work we present a novel method for the spatially resolved characterization of crystal defects in SiPMs. The contribution of crystal defects to the DCR is evaluated by exploiting the effect of “hot carrier luminescence” (HCL), which is light that is emitted during the Geiger mode operation of avalanche photodiodes (SiPM micro-cells). Spatially confined regions with an enhanced light emission intensity (hotspots) are identified within the active areas of SiPM micro-cells. By correlating the detected light intensity and the DCR, a significant contribution of up to 56% of the DCR can be attributed to less than 5% of the micro-cells. The analysis of the temperature dependence of the emitted light identifies the Shockley-Read-Hall-Generation to be the dominant mechanism responsible for the occurrence of hotspots. The motivation of this work is to generate a deeper understanding of the origin of hotspots in order to suppress their contribution to the DCR of SiPMs.http://link.springer.com/article/10.1140/epjc/s10052-018-6454-0 |
| spellingShingle | E. Engelmann E. Popova S. Vinogradov Spatially resolved dark count rate of SiPMs European Physical Journal C: Particles and Fields |
| title | Spatially resolved dark count rate of SiPMs |
| title_full | Spatially resolved dark count rate of SiPMs |
| title_fullStr | Spatially resolved dark count rate of SiPMs |
| title_full_unstemmed | Spatially resolved dark count rate of SiPMs |
| title_short | Spatially resolved dark count rate of SiPMs |
| title_sort | spatially resolved dark count rate of sipms |
| url | http://link.springer.com/article/10.1140/epjc/s10052-018-6454-0 |
| work_keys_str_mv | AT eengelmann spatiallyresolveddarkcountrateofsipms AT epopova spatiallyresolveddarkcountrateofsipms AT svinogradov spatiallyresolveddarkcountrateofsipms |