Nanostructured MoS<sub>2</sub> and WS<sub>2</sub> Photoresponses under Gas Stimuli
This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub>2</sub> and WS<sub>2</sub> materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report u...
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| Format: | Article |
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MDPI AG
2022-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/20/3585 |
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| author | Mohamed A. Basyooni Shrouk E. Zaki Nada Alfryyan Mohammed Tihtih Yasin Ramazan Eker Gamal F. Attia Mücahit Yılmaz Şule Ateş Mohamed Shaban |
| author_facet | Mohamed A. Basyooni Shrouk E. Zaki Nada Alfryyan Mohammed Tihtih Yasin Ramazan Eker Gamal F. Attia Mücahit Yılmaz Şule Ateş Mohamed Shaban |
| author_sort | Mohamed A. Basyooni |
| collection | DOAJ |
| description | This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub>2</sub> and WS<sub>2</sub> materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO<sub>2</sub>, and O<sub>2</sub> environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS<sub>2</sub> (n-type)/Si (p-type) and WS<sub>2</sub> (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10<sup>5</sup> cm<sup>−2</sup> for WS<sub>2</sub> thin film. The IV electrical results revealed that WS<sub>2</sub> is more reactive than MoS<sub>2</sub> film under different gas stimuli. WS<sub>2</sub> film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10<sup>2</sup> cm<sup>2</sup>/V. WS<sub>2</sub> film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO<sub>2</sub> environment was observed. Additionally, the external quantum efficiency of WS<sub>2</sub> revealed a remarkable enhancement in the CO<sub>2</sub> environment of 1.62 × 10<sup>8</sup> compared to MoS<sub>2</sub> film with 6.74 × 10<sup>6</sup>. According to our findings, the presence of CO<sub>2</sub> on the surface of WS<sub>2</sub> improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS<sub>2</sub> as a photodetector under gas stimuli for future optoelectronic applications. |
| first_indexed | 2024-03-09T19:40:19Z |
| format | Article |
| id | doaj.art-36bbec9203fa4addb0472c752e788050 |
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| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T19:40:19Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-36bbec9203fa4addb0472c752e7880502023-11-24T01:39:43ZengMDPI AGNanomaterials2079-49912022-10-011220358510.3390/nano12203585Nanostructured MoS<sub>2</sub> and WS<sub>2</sub> Photoresponses under Gas StimuliMohamed A. Basyooni0Shrouk E. Zaki1Nada Alfryyan2Mohammed Tihtih3Yasin Ramazan Eker4Gamal F. Attia5Mücahit Yılmaz6Şule Ateş7Mohamed Shaban8Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, TurkeyDepartment of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, TurkeyDepartment of Physics, College of Sciences, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi ArabiaInstitute of Ceramics and Polymer Engineering, University of Miskolc, H-3515 Miskolc, HungaryDepartment of Metallurgy and Material Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University, Konya 42060, TurkeyDepartment of Solar and Space Research, National Research Institute of Astronomy and Geophysics (NRIAG), Cairo 11421, EgyptDepartment of Nanoscience and Nanoengineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya 42060, TurkeyDepartment of Physics, Faculty of Science, Selçuk University, Konya 42075, TurkeyDepartment of Physics, Faculty of Science, Islamic University of Madinah, P.O. Box 170, AlMadinah Almonawara 42351, Saudi ArabiaThis study was on the optoelectronic properties of multilayered two-dimensional MoS<sub>2</sub> and WS<sub>2</sub> materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO<sub>2</sub>, and O<sub>2</sub> environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS<sub>2</sub> (n-type)/Si (p-type) and WS<sub>2</sub> (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10<sup>5</sup> cm<sup>−2</sup> for WS<sub>2</sub> thin film. The IV electrical results revealed that WS<sub>2</sub> is more reactive than MoS<sub>2</sub> film under different gas stimuli. WS<sub>2</sub> film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10<sup>2</sup> cm<sup>2</sup>/V. WS<sub>2</sub> film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO<sub>2</sub> environment was observed. Additionally, the external quantum efficiency of WS<sub>2</sub> revealed a remarkable enhancement in the CO<sub>2</sub> environment of 1.62 × 10<sup>8</sup> compared to MoS<sub>2</sub> film with 6.74 × 10<sup>6</sup>. According to our findings, the presence of CO<sub>2</sub> on the surface of WS<sub>2</sub> improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS<sub>2</sub> as a photodetector under gas stimuli for future optoelectronic applications.https://www.mdpi.com/2079-4991/12/20/3585two-dimensional materialMoS<sub>2</sub>WS<sub>2</sub>thin filmoptoelectronics |
| spellingShingle | Mohamed A. Basyooni Shrouk E. Zaki Nada Alfryyan Mohammed Tihtih Yasin Ramazan Eker Gamal F. Attia Mücahit Yılmaz Şule Ateş Mohamed Shaban Nanostructured MoS<sub>2</sub> and WS<sub>2</sub> Photoresponses under Gas Stimuli Nanomaterials two-dimensional material MoS<sub>2</sub> WS<sub>2</sub> thin film optoelectronics |
| title | Nanostructured MoS<sub>2</sub> and WS<sub>2</sub> Photoresponses under Gas Stimuli |
| title_full | Nanostructured MoS<sub>2</sub> and WS<sub>2</sub> Photoresponses under Gas Stimuli |
| title_fullStr | Nanostructured MoS<sub>2</sub> and WS<sub>2</sub> Photoresponses under Gas Stimuli |
| title_full_unstemmed | Nanostructured MoS<sub>2</sub> and WS<sub>2</sub> Photoresponses under Gas Stimuli |
| title_short | Nanostructured MoS<sub>2</sub> and WS<sub>2</sub> Photoresponses under Gas Stimuli |
| title_sort | nanostructured mos sub 2 sub and ws sub 2 sub photoresponses under gas stimuli |
| topic | two-dimensional material MoS<sub>2</sub> WS<sub>2</sub> thin film optoelectronics |
| url | https://www.mdpi.com/2079-4991/12/20/3585 |
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