Selective Photosensitive Structures Based On Au-Algan Schottky Barrier

Created and studied selective photosensitive structures based on Au-AlGaN Schottky barrier for the ultraviolet range of the spectrum. The methods of spectrum management photosensitivity by the use of the wide windows and the effects of over-barrier transport structures Au-AlGaN. Photodiodes obtained...

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Main Authors: A. S. Evseenkov, I. A. Lamkin, I. I. Mikhailov, A. V. Solomonov, S. A. Tarasov
Format: Article
Language:Russian
Published: Saint Petersburg Electrotechnical University "LETI" 2016-02-01
Series:Известия высших учебных заведений России: Радиоэлектроника
Subjects:
Online Access:https://re.eltech.ru/jour/article/view/82
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author A. S. Evseenkov
I. A. Lamkin
I. I. Mikhailov
A. V. Solomonov
S. A. Tarasov
author_facet A. S. Evseenkov
I. A. Lamkin
I. I. Mikhailov
A. V. Solomonov
S. A. Tarasov
author_sort A. S. Evseenkov
collection DOAJ
description Created and studied selective photosensitive structures based on Au-AlGaN Schottky barrier for the ultraviolet range of the spectrum. The methods of spectrum management photosensitivity by the use of the wide windows and the effects of over-barrier transport structures Au-AlGaN. Photodiodes obtained with a half-width of the spectrum of photosensitivity 5…6 nm wavelengths 351…373 nm and a sensitivity of 140 mA/W.
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publisher Saint Petersburg Electrotechnical University "LETI"
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spelling doaj.art-36c9ae70455842448d61ce60e58ea07d2023-03-13T09:20:21ZrusSaint Petersburg Electrotechnical University "LETI"Известия высших учебных заведений России: Радиоэлектроника1993-89852658-47942016-02-0101545882Selective Photosensitive Structures Based On Au-Algan Schottky BarrierA. S. Evseenkov0I. A. Lamkin1I. I. Mikhailov2A. V. Solomonov3S. A. Tarasov4Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)Created and studied selective photosensitive structures based on Au-AlGaN Schottky barrier for the ultraviolet range of the spectrum. The methods of spectrum management photosensitivity by the use of the wide windows and the effects of over-barrier transport structures Au-AlGaN. Photodiodes obtained with a half-width of the spectrum of photosensitivity 5…6 nm wavelengths 351…373 nm and a sensitivity of 140 mA/W.https://re.eltech.ru/jour/article/view/82фотодиодультрафиолетовая областьбарьер шотки
spellingShingle A. S. Evseenkov
I. A. Lamkin
I. I. Mikhailov
A. V. Solomonov
S. A. Tarasov
Selective Photosensitive Structures Based On Au-Algan Schottky Barrier
Известия высших учебных заведений России: Радиоэлектроника
фотодиод
ультрафиолетовая область
барьер шотки
title Selective Photosensitive Structures Based On Au-Algan Schottky Barrier
title_full Selective Photosensitive Structures Based On Au-Algan Schottky Barrier
title_fullStr Selective Photosensitive Structures Based On Au-Algan Schottky Barrier
title_full_unstemmed Selective Photosensitive Structures Based On Au-Algan Schottky Barrier
title_short Selective Photosensitive Structures Based On Au-Algan Schottky Barrier
title_sort selective photosensitive structures based on au algan schottky barrier
topic фотодиод
ультрафиолетовая область
барьер шотки
url https://re.eltech.ru/jour/article/view/82
work_keys_str_mv AT asevseenkov selectivephotosensitivestructuresbasedonaualganschottkybarrier
AT ialamkin selectivephotosensitivestructuresbasedonaualganschottkybarrier
AT iimikhailov selectivephotosensitivestructuresbasedonaualganschottkybarrier
AT avsolomonov selectivephotosensitivestructuresbasedonaualganschottkybarrier
AT satarasov selectivephotosensitivestructuresbasedonaualganschottkybarrier