Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Abstract 2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide (InSe), a 2D metal monochalcogenide, is...

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書目詳細資料
Main Authors: Aishani Mazumder, Taimur Ahmed, Edwin Mayes, Sherif Abdulkader Tawfik, Salvy P. Russo, Mei Xian Low, Abhishek Ranjan, Sivacarendran Balendhran, Sumeet Walia
格式: Article
語言:English
出版: Wiley-VCH 2022-04-01
叢編:Advanced Electronic Materials
主題:
2D
layered InSe
memory
nanofilament
nonvolatile resistive switching
silver cation
在線閱讀:https://doi.org/10.1002/aelm.202100999

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https://doi.org/10.1002/aelm.202100999

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