| Summary: | X-ray detectors have numerous applications in medical imaging, industrial inspection, and crystal structure analysis. Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) shows potential as a material for high-performance X-ray detectors due to its wide bandgap, relatively high mass attenuation coefficient, and resistance to radiation damage. In this study, we present Sn-doped Ga<sub>2</sub>O<sub>3</sub> microwire detectors for solar-blind and X-ray detection. The developed detectors exhibit a switching ratio of 1.66 × 10<sup>2</sup> under X-ray irradiation and can operate stably from room temperature to 623 K, which is one of the highest reported operating temperatures for Ga<sub>2</sub>O<sub>3</sub> X-ray detectors to date. These findings offer a promising new direction for the design of Ga<sub>2</sub>O<sub>3</sub>-based X-ray detectors.
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