A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency
Conventional Copper Indium Gallium Di Selenide (CIGS)-based solar cells are more efficient than second-generation technology based on hydrogenated amorphous silicon (a-Si: H) or cadmium telluride (CdTe). So, herein the photovoltaic (PV) performance of CIGS-based solar cells has been investigated num...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-12-01
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| Series: | Heliyon |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844023100740 |
| _version_ | 1797383916906086400 |
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| author | Md. Ferdous Rahman Md. Kamrul Hasan Mithun Chowdhury Md. Rasidul Islam Md. Hafijur Rahman Md. Atikur Rahman Sheikh Rashel Al Ahmed Abu Bakar Md. Ismail Mongi Amami M. Khalid Hossain Gamil A.A.M. Al-Hazmi |
| author_facet | Md. Ferdous Rahman Md. Kamrul Hasan Mithun Chowdhury Md. Rasidul Islam Md. Hafijur Rahman Md. Atikur Rahman Sheikh Rashel Al Ahmed Abu Bakar Md. Ismail Mongi Amami M. Khalid Hossain Gamil A.A.M. Al-Hazmi |
| author_sort | Md. Ferdous Rahman |
| collection | DOAJ |
| description | Conventional Copper Indium Gallium Di Selenide (CIGS)-based solar cells are more efficient than second-generation technology based on hydrogenated amorphous silicon (a-Si: H) or cadmium telluride (CdTe). So, herein the photovoltaic (PV) performance of CIGS-based solar cells has been investigated numerically using SCAPS-1D solar simulator with different buffer layer and less expensive tin sulfide (Sn2S3) back-surface field (BSF). At first, three buffer layer such as cadmium sulfide (CdS), zinc selenide (ZnSe) and indium-doped zinc sulfide ZnS:In have been simulated with CIGS absorber without BSF due to optimized and non-toxic buffer. Then the optimized structure of Al/FTO/ZnS:In/CIGS/Ni is modified to become Al/FTO/ZnS:In/CIGS/Sn2S3/Ni by adding a Sn2S3 BSF to enhanced efficiency. The detailed analysis have been investigated is the influence of physical properties of each absorber and buffer on photovoltaic parameters including layer thickness, carrier doping concentration, bulk defect density, interface defect density. This study emphasizes investigating the reasons for the actual devices' poor performance and illustrates how each device's might vary open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), power conversion efficiency (PCE), and quantum efficiency (QE). The optimized structure offers outstanding power conversion efficiency (PCE) of 21.83 % with only 0.80 μm thick CIGS absorber. The proposed CIGS-based solar cell performs better than the previously reported conventional designs while also reducing CIGS thickness and cost. |
| first_indexed | 2024-03-08T21:27:58Z |
| format | Article |
| id | doaj.art-3784fa9439de4dda84809935aa77ae2d |
| institution | Directory Open Access Journal |
| issn | 2405-8440 |
| language | English |
| last_indexed | 2024-03-08T21:27:58Z |
| publishDate | 2023-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Heliyon |
| spelling | doaj.art-3784fa9439de4dda84809935aa77ae2d2023-12-21T07:34:56ZengElsevierHeliyon2405-84402023-12-01912e22866A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiencyMd. Ferdous Rahman0Md. Kamrul Hasan1Mithun Chowdhury2Md. Rasidul Islam3Md. Hafijur Rahman4Md. Atikur Rahman5Sheikh Rashel Al Ahmed6Abu Bakar Md. Ismail7Mongi Amami8M. Khalid Hossain9Gamil A.A.M. Al-Hazmi10Advanced Energy Materials and Solar Cell Research Laboratory, Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur, 5400, Bangladesh; Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, 6205, Bangladesh; Corresponding author. Advanced Energy Materials and Solar Cell Research Laboratory, Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur, 5400, Bangladesh.Advanced Energy Materials and Solar Cell Research Laboratory, Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur, 5400, BangladeshAdvanced Energy Materials and Solar Cell Research Laboratory, Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur, 5400, BangladeshDepartment of Electrical and Electronic Engineering, Bangamata Sheikh Fojilatunnesa Mujib Science & Technology University, Jamalpur, 2012, BangladeshDepartment of Physics, Pabna University of Science and Technology, Pabna, 6600, BangladeshDepartment of Physics, Pabna University of Science and Technology, Pabna, 6600, BangladeshDepartment of Electrical, Electronic and Communication Engineering, Pabna University of Science and Technology, Pabna, 6600, BangladeshSolar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, 6205, BangladeshDepartment of Chemistry, College of Sciences, King Khalid University, P.O. Box 9004, Abha, Saudi ArabiaInstitute of Electronics, Atomic Energy Research Establishment, Bangladesh Atomic Energy Commission, Dhaka, 1349, BangladeshDepartment of Chemistry, College of Sciences, King Khalid University, P.O. Box 9004, Abha, Saudi ArabiaConventional Copper Indium Gallium Di Selenide (CIGS)-based solar cells are more efficient than second-generation technology based on hydrogenated amorphous silicon (a-Si: H) or cadmium telluride (CdTe). So, herein the photovoltaic (PV) performance of CIGS-based solar cells has been investigated numerically using SCAPS-1D solar simulator with different buffer layer and less expensive tin sulfide (Sn2S3) back-surface field (BSF). At first, three buffer layer such as cadmium sulfide (CdS), zinc selenide (ZnSe) and indium-doped zinc sulfide ZnS:In have been simulated with CIGS absorber without BSF due to optimized and non-toxic buffer. Then the optimized structure of Al/FTO/ZnS:In/CIGS/Ni is modified to become Al/FTO/ZnS:In/CIGS/Sn2S3/Ni by adding a Sn2S3 BSF to enhanced efficiency. The detailed analysis have been investigated is the influence of physical properties of each absorber and buffer on photovoltaic parameters including layer thickness, carrier doping concentration, bulk defect density, interface defect density. This study emphasizes investigating the reasons for the actual devices' poor performance and illustrates how each device's might vary open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), power conversion efficiency (PCE), and quantum efficiency (QE). The optimized structure offers outstanding power conversion efficiency (PCE) of 21.83 % with only 0.80 μm thick CIGS absorber. The proposed CIGS-based solar cell performs better than the previously reported conventional designs while also reducing CIGS thickness and cost.http://www.sciencedirect.com/science/article/pii/S2405844023100740Back Surface Field (BSF)Tin sulfide (Sn2S3)CIGS-Based solar cellNon-toxic buffer layerSCAPS-1DThin-film solar cell |
| spellingShingle | Md. Ferdous Rahman Md. Kamrul Hasan Mithun Chowdhury Md. Rasidul Islam Md. Hafijur Rahman Md. Atikur Rahman Sheikh Rashel Al Ahmed Abu Bakar Md. Ismail Mongi Amami M. Khalid Hossain Gamil A.A.M. Al-Hazmi A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency Heliyon Back Surface Field (BSF) Tin sulfide (Sn2S3) CIGS-Based solar cell Non-toxic buffer layer SCAPS-1D Thin-film solar cell |
| title | A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency |
| title_full | A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency |
| title_fullStr | A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency |
| title_full_unstemmed | A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency |
| title_short | A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency |
| title_sort | qualitative design and optimization of cigs based solar cells with sn2s3 back surface field a plan for achieving 21 83 efficiency |
| topic | Back Surface Field (BSF) Tin sulfide (Sn2S3) CIGS-Based solar cell Non-toxic buffer layer SCAPS-1D Thin-film solar cell |
| url | http://www.sciencedirect.com/science/article/pii/S2405844023100740 |
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