A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation
This work reports a novel low-temperature poly-silicon thin-film-transistor-based pixel circuit for active-matrix neurostimulation. The pixel circuit consists of four transistors and one capacitor (4T1C) for programmable current-mode stimulation, which are designed for storing stimulation intensity...
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10318153/ |
| _version_ | 1797401001628532736 |
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| author | Taoming Guo Bowen Liu Jiwei Zou Hanbin Ma Yongpan Liu Xueqing Li Huazhong Yang Chen Jiang |
| author_facet | Taoming Guo Bowen Liu Jiwei Zou Hanbin Ma Yongpan Liu Xueqing Li Huazhong Yang Chen Jiang |
| author_sort | Taoming Guo |
| collection | DOAJ |
| description | This work reports a novel low-temperature poly-silicon thin-film-transistor-based pixel circuit for active-matrix neurostimulation. The pixel circuit consists of four transistors and one capacitor (4T1C) for programmable current-mode stimulation, which are designed for storing stimulation intensity information, simultaneously stimulating a large number of channels, and discharging stimulation electrodes. Due to the high mobility and low threshold voltages of the devices, the fabricated circuit occupies a pixel area of <inline-formula> <tex-math notation="LaTeX">$200\times 200\,\,\mu \text{m}\,\,^{\mathrm{ 2}}$ </tex-math></inline-formula>, and delivers a stimulation current of <inline-formula> <tex-math notation="LaTeX">$147 ~\mu \text{A}$ </tex-math></inline-formula>, sufficient to stimulate a neuron. The turn-on resistance of the fabricated transistor is below 6 <inline-formula> <tex-math notation="LaTeX">$\text{k}\Omega $ </tex-math></inline-formula>, sufficient to be used as switches for bioelectronic applications. By employing a discharging switch transistor, the accumulated charges on the stimulation electrodes were released, and the electrode voltage was reduced to 0.08 V, thus mitigating corrosion. We demonstrated that two pixel circuits at different rows and columns can output stimuli simultaneously without a noticeable delay. This pixel circuit shows high potential to scale up as an active-matrix neurostimulation system with a high channel count. |
| first_indexed | 2024-03-09T02:03:34Z |
| format | Article |
| id | doaj.art-37b13807fbb84edbb18619ec09885344 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-09T02:03:34Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-37b13807fbb84edbb18619ec098853442023-12-08T00:02:58ZengIEEEIEEE Journal of the Electron Devices Society2168-67342023-01-011169569910.1109/JEDS.2023.333289410318153A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous NeurostimulationTaoming Guo0https://orcid.org/0000-0002-8461-4784Bowen Liu1Jiwei Zou2Hanbin Ma3https://orcid.org/0000-0002-7629-2287Yongpan Liu4https://orcid.org/0000-0002-4892-2309Xueqing Li5https://orcid.org/0000-0002-8051-3345Huazhong Yang6https://orcid.org/0000-0003-2421-353XChen Jiang7https://orcid.org/0000-0002-6806-5324Department of Electronic Engineering, Tsinghua University, Beijing, ChinaDepartment of Electronic Engineering, Tsinghua University, Beijing, ChinaDepartment of Electronic Engineering, Tsinghua University, Beijing, ChinaCAS Key Laboratory of Bio Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Suzhou, ChinaDepartment of Electronic Engineering, Tsinghua University, Beijing, ChinaDepartment of Electronic Engineering, Tsinghua University, Beijing, ChinaDepartment of Electronic Engineering, Tsinghua University, Beijing, ChinaDepartment of Electronic Engineering, Tsinghua University, Beijing, ChinaThis work reports a novel low-temperature poly-silicon thin-film-transistor-based pixel circuit for active-matrix neurostimulation. The pixel circuit consists of four transistors and one capacitor (4T1C) for programmable current-mode stimulation, which are designed for storing stimulation intensity information, simultaneously stimulating a large number of channels, and discharging stimulation electrodes. Due to the high mobility and low threshold voltages of the devices, the fabricated circuit occupies a pixel area of <inline-formula> <tex-math notation="LaTeX">$200\times 200\,\,\mu \text{m}\,\,^{\mathrm{ 2}}$ </tex-math></inline-formula>, and delivers a stimulation current of <inline-formula> <tex-math notation="LaTeX">$147 ~\mu \text{A}$ </tex-math></inline-formula>, sufficient to stimulate a neuron. The turn-on resistance of the fabricated transistor is below 6 <inline-formula> <tex-math notation="LaTeX">$\text{k}\Omega $ </tex-math></inline-formula>, sufficient to be used as switches for bioelectronic applications. By employing a discharging switch transistor, the accumulated charges on the stimulation electrodes were released, and the electrode voltage was reduced to 0.08 V, thus mitigating corrosion. We demonstrated that two pixel circuits at different rows and columns can output stimuli simultaneously without a noticeable delay. This pixel circuit shows high potential to scale up as an active-matrix neurostimulation system with a high channel count.https://ieeexplore.ieee.org/document/10318153/Active matrixneurostimulationsimultaneous stimulationthin film transistors |
| spellingShingle | Taoming Guo Bowen Liu Jiwei Zou Hanbin Ma Yongpan Liu Xueqing Li Huazhong Yang Chen Jiang A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation IEEE Journal of the Electron Devices Society Active matrix neurostimulation simultaneous stimulation thin film transistors |
| title | A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation |
| title_full | A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation |
| title_fullStr | A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation |
| title_full_unstemmed | A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation |
| title_short | A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation |
| title_sort | low temperature poly silicon thin film transistor pixel circuit for active matrix simultaneous neurostimulation |
| topic | Active matrix neurostimulation simultaneous stimulation thin film transistors |
| url | https://ieeexplore.ieee.org/document/10318153/ |
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